| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| SVHC Present |
The 2N3232 is a Silicon NPN Power Transistor manufactured by Motorola Semiconductor. It is designed for general purpose power switch and amplifier applications, offering an excellent Safe Operating Area.
Key electrical characteristics include a Collector-Emitter Sustaining Voltage (VCEO(SUS)) of 60V minimum, a continuous Collector Current (IC) of 7.5A, and a Collector Power Dissipation (PC) of 117W at 25℃. The DC Current Gain (hFE) ranges from 18 to 55 at IC=3A, VCE=10V. The Collector-Emitter Saturation Voltage (VCE(sat)) is a maximum of 2.5V at IC=3A, IB=0.2A.
This transistor features a TO-3 case and is suitable for through-hole mounting. The maximum operating junction temperature is 200℃, with a thermal resistance (junction to case) of 1.5℃/W. It is rated for a maximum collector current of 7.5A and a collector-emitter voltage of 60V.
Applications include general purpose power switching and amplification circuits where robust performance and reliability are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 60V.
The maximum continuous collector current (IC) is 7.5A.
The maximum power dissipation is 117W at a case temperature of 25°C.
The 2N3232 is housed in a TO3 package.
The maximum junction temperature is 200°C, and the storage temperature range is -65°C to 200°C.
The DC current gain (hFE) is minimum 18 and maximum 55 at IC=3A, VCE=10V.
