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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3209 is a PNP Silicon Transistor from Fairchild Semiconductor, housed in a TO-18 package. This transistor is designed for general-purpose applications and offers a collector-emitter voltage (Vce) of 20V and a maximum collector current (Ic max) of 200mA.
Key electrical characteristics include a minimum forward current transfer ratio (hFE) of 30 and a maximum of 120. The transition frequency (ft) is specified at 400 MHz, indicating its suitability for high-frequency applications. The device operates within a temperature range of -55°C to 175°C.
With a maximum collector power dissipation of 0.36W, the 2N3209 is suitable for moderate power applications. Its TO-18 metal can package is designed for through-hole mounting, making it easy to integrate into various circuit designs. The transistor's specifications make it a reliable choice for amplification and switching tasks in electronic circuits.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) for the 2N3209 is 20V.
The maximum collector current (Ic max) for the 2N3209 is 0.2A.
The minimum forward current transfer ratio (hFE) for the 2N3209 is 30.
The transition frequency (ft) of the 2N3209 is 400 MHz.
The maximum operating temperature for the 2N3209 is 175°C.
The 2N3209 transistor is in a TO-18 package.
No, the 2N3209 is not surface mounted; it is designed for through-hole mounting.