| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12 pcs
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12 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The BDY76 is a Silicon NPN Transistor from SGS Thomson, designed for special purpose applications. This component is housed in a TO-3 package, indicating its suitability for power handling.
Key electrical specifications include a maximum collector-emitter voltage (Vce) of 60V and a maximum collector current (Ic) of 20A, tested at 10A. The maximum power dissipation (Pd) is rated at 150W. It also offers a minimum forward current transfer ratio (hFE) of 40 and a maximum of 120. The transition frequency (ft) is a minimum of 0.8 MHz at 4.0V.
Thermal characteristics include a maximum operating junction temperature (Tj) of 200°C and a maximum operating temperature (Topr) of 175°C. The power dissipation derates at 854 mW/°C above 25°C.
This transistor is designed for through-hole mounting. Its specifications make it suitable for various power switching and amplification tasks where robust performance is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) for the BDY76 transistor is 60V.
The maximum continuous collector current (Ic) for the BDY76 is 20A, tested at 10A.
The BDY76 transistor has a maximum power dissipation (Pd) of 150W.
The maximum operating temperature (Topr) for the BDY76 is 175°C.
The BDY76 transistor is supplied in a TO-3 package.