BDY76 The BDY76 is a Silicon NPN Transistor manufactured by SGS Thomson. It features a maximum collector current of 20A and a maximum collector-emitter voltage of 60V.
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BDY76

Available from 1 distributors
Mfr Name: SESCOCEM
SESCOCEM
The BDY76 is a Silicon NPN Transistor manufactured by SGS Thomson. It features a maximum collector current of 20A and a maximum collector-emitter voltage of 60V.
Total Stock: 12 pcs
$ Price Range: $1.87

BDY76 Available from 1 distributor

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BDY76 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Junction Temperature
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BDY76 Description

Short technical summary and product information.

The BDY76 is a Silicon NPN Transistor from SGS Thomson, designed for special purpose applications. This component is housed in a TO-3 package, indicating its suitability for power handling.

 

Key electrical specifications include a maximum collector-emitter voltage (Vce) of 60V and a maximum collector current (Ic) of 20A, tested at 10A. The maximum power dissipation (Pd) is rated at 150W. It also offers a minimum forward current transfer ratio (hFE) of 40 and a maximum of 120. The transition frequency (ft) is a minimum of 0.8 MHz at 4.0V.

 

Thermal characteristics include a maximum operating junction temperature (Tj) of 200°C and a maximum operating temperature (Topr) of 175°C. The power dissipation derates at 854 mW/°C above 25°C.

 

This transistor is designed for through-hole mounting. Its specifications make it suitable for various power switching and amplification tasks where robust performance is required.

BDY76 Quick Information

Product Type: Transistor
Canonical Name: BDY76 Silicon NPN Transistor
Subcategory: Special Purpose

BDY76 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BDY76 Estimated Pricing

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1+ $1.87 $1.87

Estimated market price range - modelled values for guidance only, not live distributor offers.

BDY76 Features

  • NPN Silicon Transistor for special purposes.
  • Maximum Collector Current: 20A.
  • Maximum Collector-Emitter Voltage: 60V.
  • High Power Dissipation: 150W.
  • TO-3 through-hole package.

BDY76 Applications

  • Suitable for power switching circuits.
  • Used in amplification applications.
  • Designed for demanding environments.
  • Robust power handling capabilities.

BDY76 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the BDY76 transistor?

The maximum collector-emitter voltage (Vce) for the BDY76 transistor is 60V.

What is the maximum continuous collector current for the BDY76?

The maximum continuous collector current (Ic) for the BDY76 is 20A, tested at 10A.

What is the maximum power dissipation of the BDY76 transistor?

The BDY76 transistor has a maximum power dissipation (Pd) of 150W.

What is the operating temperature range for the BDY76?

The maximum operating temperature (Topr) for the BDY76 is 175°C.

What package type is the BDY76 transistor supplied in?

The BDY76 transistor is supplied in a TO-3 package.

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