| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IPS 2N3054 is a silicon NPN power transistor manufactured using an epitaxial base process. It is housed in a hermetically sealed metal TO-66 case, making it suitable for general purpose amplifier and switching applications.
Key electrical characteristics include a maximum Collector-Base Voltage of 90V and a maximum Collector-Emitter Voltage of 55V. The device can handle a Continuous Collector Current of up to 4.0A and a Continuous Base Current of 2.0A. Power dissipation is rated at 25W for the 2N3054 variant.
Thermal performance is characterized by a Thermal Resistance Junction-to-Case of 7.0 °C/W for the 2N3054. The operating and storage junction temperature range is from -65°C to +200°C.
This transistor is designed for robust performance in various electronic circuits requiring amplification or switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Base Voltage (VCBO) for the 2N3054 is 90V.
The maximum Continuous Collector Current (IC) for the 2N3054 is 4.0A.
The Power Dissipation (PD) for the 2N3054 is 25W.
The operating and storage junction temperature range for the 2N3054 is -65°C to +200°C.
The 2N3054 is available in the TO-66 case package.
The RoHS status for the 2N3054 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2N3054 is 1 Unlimited.
