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625 pcs
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625 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BAW62 from NXP Semiconductors is a high-speed switching diode fabricated using planar technology and encapsulated in a hermetically sealed leaded glass SOD27 (DO-35) package. This diode is designed for applications requiring fast switching speeds, with a maximum switching time of 4 ns.
Key electrical characteristics include a continuous reverse voltage of 75V and a repetitive peak reverse voltage also rated at 75V. The continuous forward current is specified at a maximum of 250mA, while the repetitive peak forward current can reach up to 450mA. For non-repetitive surges, the peak forward current is 4A for 1µs, 1A for 1ms, and 0.5A for 1s. The forward voltage is a maximum of 1V at 100mA, and the reverse leakage current is a low 5µA at 75V. Capacitance is typically 2pF at 0V and 1MHz.
With a total power dissipation of 350mW at 25°C (on an FR4 PCB with 10mm lead length), the BAW62 is suitable for various high-speed switching and fast logic applications. The operating junction temperature ranges from -65°C to +200°C, with a storage temperature range of -65°C to +200°C.
The diode is mounted via a through-hole method in an axial package (DO-35, DO-204AH). Its hermetically sealed glass construction ensures reliability in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous reverse voltage for the BAW62 diode is 75 V.
The maximum repetitive peak forward current for the BAW62 diode is 450 mA.
The BAW62 diode has a high switching speed with a maximum of 4 ns.
The BAW62 diode is available in a hermetically sealed leaded glass SOD27 (DO-35) package, also specified as DO-204AH, Axial.
The operating junction temperature for the BAW62 diode ranges up to 200°C.