2N3019SJANTX
SEMICOA
The Semicoa 2N3019SJANTX is a silicon NPN transistor in a hermetically sealed TO-39 metal can package. It is designed for general purpose and low power applications.
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3019SJANTX from Microsemi Corporation is a hermetically sealed silicon NPN transistor designed for general purpose and low power applications. It features a TO-39 metal can package and is also available in chip configuration.
Key electrical specifications include a collector-emitter voltage (VCEO) of 80V, a collector-base voltage (VCBO) of 140V, and an emitter-base voltage (VEBO) of 7V. The continuous collector current (IC) is rated at 1A. Power dissipation is 0.8W at 25°C ambient and 5.0W at 25°C case temperature.
This transistor exhibits a DC current gain (hFE) ranging from 15 to 300 depending on the operating conditions. Small signal characteristics include a forward current transfer ratio (|hFE|) of 5-20 at 20 MHz and 80-400 at 1 kHz. Switching characteristics show a saturated turn-on time (tON + tOFF) of 30ns.
The operating junction temperature ranges from -65°C to +200°C, with a storage temperature range of -65°C to +200°C. The TO-39 package is suitable for through-hole mounting.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N3019SJANTX is 80V.
The continuous collector current (IC) for the 2N3019SJANTX is 1A.
The 2N3019SJANTX transistor comes in a hermetically sealed TO-39 metal can package.
The operating junction temperature range for the 2N3019SJANTX is -65°C to +200°C.
The saturated turn-on time (tON + tOFF) for the 2N3019SJANTX is 30ns.