| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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8 pcs
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8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Automotive Grade | |
| Industrial Grade | |
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| Military Grade | |
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The Semicoa 2N3019SJANTX is a silicon NPN bipolar junction transistor (BJT) designed for general purpose and low power applications. It features a hermetically sealed TO-39 metal can package, ensuring reliability in various environments.
Key electrical specifications include a collector-emitter voltage (VCEO) of 80V, a collector-base voltage (VCBO) of 140V, and an emitter-base voltage (VEBO) of 7V. The continuous collector current (IC) is rated at 1A. The transistor offers a DC current gain (hFE) ranging from 15 to 300 depending on the operating conditions and temperature.
Thermal characteristics include a maximum power dissipation of 5.0W at 25°C case temperature and an operating junction temperature range of -65°C to +200°C. The TO-39 package is suitable for through-hole mounting.
This transistor is available with various qualification levels, including JAN, JANTX, JANTXV, and JANS, per MIL-PRF-19500 specifications. Radiation testing is also available upon request.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N3019SJANTX is 80V.
The continuous collector current (IC) rating for the 2N3019SJANTX is 1A.
The 2N3019SJANTX is available in a hermetically sealed TO-39 metal can package.
The operating junction temperature range is -65°C to +200°C, and the storage temperature range is also -65°C to +200°C.
The typical DC current gain (hFE) is 300 at IC = 150 mA and VCE = 10 Volts, and 200 at IC = 0.1 mA and VCE = 10 Volts.
The saturated turn-on time (tON + tOFF) is a maximum of 30ns.