TMBT3906.LMT
Toshiba
The Toshiba TMBT3906.LMT is a single bipolar junction transistor (BJT) in the Transistors - Bipolar (BJT) - Single category. It is RoHS3 Compliant and has an MSL rating of 1 Unlimited.
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227 pcs
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227 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N2907A is a PNP Silicon Epitaxial Planar Transistor manufactured by SEMTECH. This component is suitable for switching and AF applications.
Key electrical specifications include a maximum collector current of 600mA and a collector base voltage of 60V. The emitter base voltage is 5V, and the collector emitter saturation voltage is 400mV. The maximum power dissipation is rated at 500mW.
This transistor operates within a temperature range of -65°C to 200°C. It is packaged in a TO-18 case and features a through-hole mounting type.
| Qty | Low | High |
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current is 600mA.
The collector base voltage is 60V.
The maximum power dissipation is 500mW.
The operating temperature range is -65°C to 200°C.
The 2N2907A is in a TO-18 package.
It is a through-hole mount component.