2N2907 2N2907 is a PNP bipolar junction transistor rated for 40V collector-emitter breakdown voltage and 600mA collector current, with 1.8W power dissipation in a TO-18 metal can package.
Mfr Part #:

2N2907

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
2N2907 is a PNP bipolar junction transistor rated for 40V collector-emitter breakdown voltage and 600mA collector current, with 1.8W power dissipation in a TO-18 metal can package.
Total Stock: 12 pcs
$ Price Range: $0.14

2N2907 Available from 2 distributors

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9 pcs
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3 pcs
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2N2907 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N2907 Description

Short technical summary and product information.

The 2N2907 is a PNP bipolar junction transistor manufactured by STMicroelectronics. It is designed for general purpose switching and amplification applications. Key electrical specifications include a collector-emitter breakdown voltage (Vceo) of 40V, a continuous collector current (Ic) of 600mA, and a power dissipation (Pd) of 1.8W. The DC current gain (hFE) is a minimum of 100 at 150mA collector current and 10V collector-emitter voltage. The collector-emitter saturation voltage (Vce(sat)) is a maximum of 1.6V at 500mA collector current and 50mA base current. The transition frequency (ft) is 200MHz, making it suitable for low to medium frequency circuits.

 

The transistor is housed in a through-hole TO-18 metal can package (TO-206AA, TO-18-3). It supports a maximum junction operating temperature of 200°C. The device is RoHS3 compliant (unverified) and has an MSL of Level 1 (unlimited). This component is commonly used in through-hole PCB designs for switching, driver, and amplifier stages.

2N2907 Quick Information

Product Type: Bipolar Transistor
Canonical Name: 2N2907 PNP Bipolar Transistor
Subcategory: PNP Transistor

2N2907 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N2907 Estimated Pricing

Qty Low High
2,000+ $0.14 $0.14

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N2907 Features

  • PNP bipolar junction transistor design.
  • Rated for 40V collector-emitter voltage.
  • Supports 600mA continuous collector current.
  • 1.8W power dissipation capability.
  • Through-hole TO-18 metal can package.

2N2907 Applications

  • Used in general purpose switching circuits.
  • Suitable for amplifier stages.
  • Ideal for low-power driver applications.
  • Common in through-hole PCB designs.

2N2907 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage (Vceo) of the 2N2907?

The collector-emitter breakdown voltage is 40V (low confidence due to conflict with 60V from another source).

What is the maximum collector current (Ic) for the 2N2907?

The maximum continuous collector current is 600mA.

What is the power dissipation of the 2N2907?

The power dissipation is 1.8W.

What is the DC current gain (hFE) of the 2N2907?

The minimum DC current gain is 100 at Ic=150mA and Vce=10V.

What package is the 2N2907 available in?

The 2N2907 is available in a through-hole TO-18 metal can package (TO-206AA, TO-18-3).

What is the operating temperature range of the 2N2907?

The maximum junction operating temperature is 200°C.

Is the 2N2907 RoHS compliant?

The component is listed as RoHS3 compliant, but this is unverified and should be confirmed with official documentation.

2N2907 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
2N2907
2N2907
Motorola Semicondutor
The 2N2907 is a PNP bipolar junction transistor from Motorola Semicondutor. It features a 40V collector-emitter voltage rating, 600mA collector current, and 1.8W power dissipation.
View Part
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