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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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100,000 pcs
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100000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Military Grade | |
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The 2N2907 is a PNP bipolar junction transistor manufactured by Motorola Semicondutor. It is designed for general-purpose switching and amplification applications.
Key electrical specifications include a collector-emitter voltage (Vce) of 40V, a collector current (Ic) of 600mA, and a power dissipation (Pd) of 1.8W. The transistor offers a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a maximum Vce saturation voltage of 1.6V at 500mA. It has a transition frequency (ft) of 200MHz.
The device is housed in a through-hole TO-18 metal can package (TO-206AA, TO-18-3). It is rated for a maximum junction temperature of 200°C.
The 2N2907 has a collector-emitter voltage (Vce) rating of 40V.
The maximum collector current (Ic) is 600mA (0.6A).
The power dissipation (Pd) is 1.8W.
The 2N2907 is available in a through-hole TO-18 metal can package (TO-206AA, TO-18-3).
The maximum junction temperature (TJ) is 200°C.
The transition frequency (ft) is 200 MHz.
The minimum DC current gain (hFE) is 100 at Ic=150mA and Vce=10V.