2N2905AJAN
Microsemi Corporation
The Microsemi Corporation 2N2905AJAN is a PNP Switching Silicon Transistor in a TO-39 package. It offers a VCEO of up to 60V and an IC of 600mA.
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7 pcs
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7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N2906 is a PNP silicon transistor from SESCOCEM, suitable for high-speed saturated switching and general-purpose applications. It is housed in a TO-18 metal case.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 60V and a maximum collector current (IC) of 600mA. The device offers a total power dissipation of 0.5W at 25°C ambient temperature. Its operating and storage temperature range is from -65°C to +200°C.
Dynamic characteristics include a forward current transfer ratio (hFE) and a magnitude of small signal forward current transfer ratio. Switching characteristics such as turn-on time and turn-off time are also specified, making it suitable for applications requiring fast switching.
This transistor is available in various RoHS compliant and non-RoHS configurations. Its TO-18 package is designed for through-hole mounting.
| Qty | Low | High |
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N2906 transistor is 60V.
The maximum collector current (IC) for the 2N2906 transistor is 600mA.
The operating and storage temperature range for the 2N2906 transistor is -65°C to +200°C.
The 2N2906 transistor is supplied in a TO-18 case.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.