Mfr Part #:

2N2905AJAN

The Microsemi Corporation 2N2905AJAN is a PNP Switching Silicon Transistor in a TO-39 package. It offers a VCEO of up to 60V and an IC of 600mA.

✓ Total Stock: 13 pcs

$ Price Range: $0.99

2N2905AJAN Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
ADI/AAR OEM Supply ✓ Non-Authorised Inventory information	13 pcs On Request	13 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

2N2905AJAN Specifications Quick View

Most important parameters for selection – full specs in datasheet.

SELECT ALL

Category	New Products
Manufacturer Name	Microsemi Corporation
Input Capacitance	30 pF
Mounting Type	Through Hole
Storage Temperature	°C ~ °C
Tape & Reel	No
Turn Off Time	300 ns
Turn On Time	45 ns

View Similar Products (0)

2N2905AJAN Description

Short technical summary and product information.

The Microsemi Corporation 2N2905AJAN is a PNP Switching Silicon Transistor designed for various electronic applications. This component features a maximum Collector-Emitter Voltage (VCEO) of 60 Vdc and a maximum Collector Current (IC) of 600 mAdc.

With a TO-39 package, the 2N2905AJAN is suitable for through-hole mounting. Its electrical characteristics include a maximum power dissipation of 3 W at 25°C case temperature and an operating junction temperature range of -65°C to +200°C.

Key electrical parameters such as Forward Current Transfer Ratio (hFE) vary with operating conditions, ranging from 20 to 450. The transistor also exhibits a Collector-Emitter Saturation Voltage (VCE(sat)) of up to 1.6 Vdc and a Base-Emitter Voltage (VBE(sat)) of up to 2.6 Vdc. Dynamic characteristics include an output capacitance (Cobo) of 8 pF and an input capacitance (Cibo) of 30 pF.

This transistor is qualified per MIL-PRF-19500/290 and is available in JAN, JANTX, JANTXV, and JANS levels, indicating its suitability for demanding applications.

2N2905AJAN Quick Information

Product Type: PNP Switching Silicon Transistor

Series: JAN

Canonical Name: 2N2905AJAN PNP Switching Silicon Transistor

Subcategory: PNP Switching Silicon Transistor

2N2905AJAN Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

2N2905AJAN Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N2905AJAN Features

PNP Switching Silicon Transistor
Maximum VCEO up to 60 Vdc
Maximum IC up to 600 mAdc
TO-39 Package
Qualified per MIL-PRF-19500/290

2N2905AJAN Applications

Suitable for switching and amplification circuits.
Used in signal processing and control applications.
Ideal for low-power switching in electronic devices.
Applicable in high-voltage switching environments.

2N2905AJAN FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum Collector-Emitter Voltage (VCEO) for the 2N2905AJAN?

The maximum Collector-Emitter Voltage (VCEO) for the 2N2905AJAN is 60 Vdc.

What is the maximum Collector Current (IC) for the 2N2905AJAN?

The maximum Collector Current (IC) for the 2N2905AJAN is 600 mAdc.

What is the package type for the 2N2905AJAN transistor?

The 2N2905AJAN transistor comes in a TO-39 package.

What is the operating temperature range for the 2N2905AJAN?

The operating and storage junction temperature range for the 2N2905AJAN is -65°C to +200°C.

What is the Forward Current Transfer Ratio (hFE) of the 2N2905AJAN?

The Forward Current Transfer Ratio (hFE) for the 2N2905AJAN varies depending on the test conditions, with minimum values ranging from 20 to 100.

What is the Collector-Emitter Saturation Voltage (VCE(sat)) for the 2N2905AJAN?

The Collector-Emitter Saturation Voltage (VCE(sat)) for the 2N2905AJAN is a maximum of 1.6 Vdc.

What is the turn-off time for the 2N2905AJAN transistor?

The turn-off time (toff) for the 2N2905AJAN is a maximum of 300 ns.