2N2905A PNP bipolar transistor with 40V collector-emitter breakdown voltage and 600mA collector current. Housed in a TO-39 metal can package for through-hole mounting.
Mfr Part #:

2N2905A

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP bipolar transistor with 40V collector-emitter breakdown voltage and 600mA collector current. Housed in a TO-39 metal can package for through-hole mounting.
Total Stock: 115 pcs
$ Price Range: $11.79

2N2905A Available from 3 distributors

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100 pcs
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2N2905A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N2905A Description

Short technical summary and product information.

The 2N2905A is a PNP bipolar junction transistor designed for general purpose switching and amplification. It features a maximum collector-emitter breakdown voltage of 40V and a continuous collector current rating of 600mA. The device can dissipate up to 600mW of power.

 

Electrical characteristics include a minimum DC current gain (hFE) of 100 at 150mA collector current and 10V VCE, and a maximum saturation voltage of 1.6V at 50mA base current and 500mA collector current. The transistor is housed in a TO-39 metal can package (also known as TO-205AD) for through-hole mounting, offering robust mechanical and thermal performance.

 

The 2N2905A is listed as RoHS3 compliant and has an MSL rating of 1 (unlimited). It is suitable for a variety of low-power switching and linear applications.

2N2905A Quick Information

Product Type: Bipolar (BJT) Transistor
Canonical Name: 2N2905A PNP Bipolar Transistor
Subcategory: Single BJT

2N2905A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N2905A Estimated Pricing

Qty Low High
1+ $11.79 $11.79

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N2905A Features

  • PNP bipolar junction transistor.
  • 40V collector-emitter breakdown voltage.
  • 600mA continuous collector current.
  • 600mW power dissipation.
  • TO-39 through-hole package.

2N2905A Applications

  • General purpose switching circuits.
  • Linear amplification stages.
  • Driver for small loads.
  • Signal processing applications.

2N2905A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the 2N2905A?

The maximum collector-emitter breakdown voltage is 40V.

What package is the 2N2905A available in?

The 2N2905A is available in a TO-39 (TO-205AD, TO-39-3 Metal Can) package for through-hole mounting.

Is the 2N2905A RoHS compliant?

Yes, it is listed as RoHS3 compliant, though this is unverified.

What is the maximum collector current of the 2N2905A?

The maximum continuous collector current is 600mA.

What is the power dissipation of the 2N2905A?

The maximum power dissipation is 600mW.

What is the DC current gain (hFE) of the 2N2905A?

The minimum DC current gain is 100 at 150mA collector current and 10V VCE.

What is the saturation voltage of the 2N2905A?

The maximum saturation voltage is 1.6V at 50mA base current and 500mA collector current.

2N2905A Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
2N2905A
2N2905A
Solid State Devices Inc (SSDI)
The 2N2905A is a PNP bipolar junction transistor from Solid State Devices Inc (SSDI). It features a maximum collector-emitter voltage of 40V, continuous collector current of 600mA, and a transition frequency of 200MHz.
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