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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,500 pcs
|
4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N2905A is a PNP bipolar junction transistor manufactured by Solid State Devices Inc (SSDI). It is designed for general purpose switching and amplification applications. The transistor has a maximum collector-emitter voltage (Vce) of 40V and a maximum continuous collector current (Ic) of 600mA. Power dissipation is rated at 600mW. The device offers a minimum DC current gain (hFE) of 100 at 150mA collector current and 10V collector-emitter voltage. The maximum collector-emitter saturation voltage is 1.6V at 500mA collector current and 50mA base current. With a transition frequency of 200MHz, the 2N2905A is suitable for circuits operating up to VHF frequencies. The operating junction temperature range is from -65°C to 200°C. The transistor is housed in a through-hole TO-39 metal can package (also known as TO-205AD). It is a common choice for low-power driver stages, signal processing, and general purpose linear amplification.
40V.
TO-39 metal can (also TO-205AD).
-65°C to 200°C junction temperature.
No, it is non-compliant per distributor data.
Minimum 100 at 150mA, 10V.
200 MHz.
Through-hole.