| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
178 pcs
|
178 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Thermal Resistance | |
| Turn Off Time | |
| Turn On Time |
The Central Semiconductor 2N2369A is a silicon epitaxial planar NPN transistor engineered for ultra-high speed saturated switching applications. This component offers a Collector-Emitter Voltage (V_CEO) of 15V and a continuous Collector Current (I_C) of up to 200mA.
Key electrical characteristics include a maximum Power Dissipation of 360mW at 25°C ambient temperature and a minimum Transition Frequency (fT) of 500MHz at 10V and 10mA. The device also exhibits a low Output Capacitance (C_ob) of 4.0pF and fast switching times, with a turn-on time (t_on) of 12ns and a turn-off time (t_off) of 18ns.
Packaged in a standard TO-18 case, the 2N2369A is designed for through-hole mounting. Its operating and storage junction temperature range is from -65°C to +200°C. The transistor is marked with its full part number for easy identification.
This transistor is suitable for high-speed switching circuits where rapid response and low saturation voltages are critical. Its specifications make it a viable option for various digital logic and signal processing applications requiring fast switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (V_CEO) for the 2N2369A is 15V.
The continuous collector current rating for the 2N2369A is 200mA.
The minimum transition frequency (fT) of the 2N2369A is 500MHz.
The 2N2369A transistor is supplied in a TO-18 case.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.