| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Central Semiconductor 2N2369A is a silicon epitaxial planar NPN transistor engineered for ultra-high speed saturated switching applications. This transistor is housed in a TO-18 case, a common package for discrete components.
Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of 15V and a Continuous Collector Current (IC) of up to 200mA. It boasts a high transition frequency (fT) of 500MHz at 100MHz, making it suitable for high-speed operations. The device also exhibits low saturation voltages, with VCE(SAT) as low as 200mV at 10mA collector current and 1.0mA base current.
Maximum ratings are provided for various parameters, including Collector-Base Voltage (VCBO) of 40V and Collector-Emitter Voltage (VCES) of 40V. Power dissipation is rated at 360mW at 25°C ambient temperature and 1.2W at 25°C case temperature. The operating and storage junction temperature range is from -65°C to +200°C.
Switching characteristics are also detailed, with turn-on time (ton) of 12ns, turn-off time (toff) of 18ns, and storage time (ts) of 13ns under specified test conditions. The lead code for the TO-18 package is provided: 1) Emitter, 2) Base, 3) Collector.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N2369A is 15V.
The continuous collector current rating (IC) for the 2N2369A is 200mA.
The transition frequency (fT) of the 2N2369A is 500MHz.
The 2N2369A is available in a TO-18 case.
The operating and storage junction temperature range for the 2N2369A is -65°C to +200°C.