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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N1533 is a Germanium PNP transistor from GSI Technology, designed for use in electronic circuits. This component features a TO3 case and is suitable for through-hole mounting.
Key electrical characteristics include a maximum collector-base voltage (Vcb) of 120V and a maximum collector-emitter voltage (Vce) of 60V. The maximum continuous collector current (Ic max) is rated at 10A. The device has a minimum forward current transfer ratio (hFE) of 20 and a maximum operating junction temperature of 110°C.
With a maximum collector power dissipation of 106W and a transition frequency (ft) of 0.02 MHz, the 2N1533 is a robust component for general-purpose amplification and switching applications where germanium transistors are preferred.
This transistor is specified with a maximum collector cutoff current (Icbo) of 2.0mA. The operating temperature range extends up to 100°C, ensuring reliable performance under various conditions. Its TO3 package is known for its thermal dissipation capabilities.
| Qty | Low | High |
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| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-base voltage (Vcb) for the 2N1533 transistor is 120V.
The maximum collector-emitter voltage (Vce) for the 2N1533 is 60V.
The maximum continuous collector current (Ic max) for the 2N1533 transistor is 10A.
The minimum forward current transfer ratio (hFE) for the 2N1533 is 20.
The 2N1533 transistor comes in a TO3 case.
No, the 2N1533 is not a surface-mounted device; it is designed for through-hole mounting.