| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The H11G1 from GI is a photodarlington-type optically coupled optocoupler. This device integrates a gallium arsenide infrared emitting diode with a silicon darlington connected phototransistor. It is designed with an integral base-emitter resistor to enhance elevated temperature characteristics.
Key electrical specifications include a forward current of 60mA, a forward voltage of 1.5V, and a high isolation voltage of 5300Vrms. The current transfer ratio is rated at 1000%. The maximum power dissipation is 200mW.
Operating within a temperature range of -55°C to 100°C, the H11G1 is housed in a 6-pin PDIP package suitable for through-hole mounting. This optocoupler is ideal for applications requiring electrical isolation between circuits.
This component is part of the H11GX series. It is suitable for various industrial and electronic applications where signal isolation is critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The H11G1 optocoupler has an isolation voltage of 5300Vrms.
The forward current for the H11G1 is 60mA.
The H11G1 operates between -55°C and 100°C.
The H11G1 is supplied in a 6-pin PDIP package.