TMBT3906.LMT
Toshiba
The Toshiba TMBT3906.LMT is a single bipolar junction transistor (BJT) in the Transistors - Bipolar (BJT) - Single category. It is RoHS3 Compliant and has an MSL rating of 1 Unlimited.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,015 pcs
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1015 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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162 pcs
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162 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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130 pcs
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130 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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The 1SMB18CAT3G from On Semiconductor is a Transient Voltage Suppressor (TVS) Diode designed for general-purpose protection applications. It features a reverse standoff voltage of 18V and a breakdown voltage of 20V. The device can clamp voltage up to 29.2V at a peak pulse current of 20.5A (10/1000µs), with a peak pulse power rating of 600W.
This TVS diode operates within a temperature range of -65°C to 150°C. It has a capacitance of 465pF at 1MHz. The 1SMB18CAT3G is housed in a surface mount SMB package (DO-214AA).
It is suitable for various general-purpose applications requiring transient voltage suppression. The bidirectional Zener type design offers protection against overvoltage transients.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
18V.
20V minimum.
29.2V maximum at 20.5A.
20.5A (10/1000µs).
Surface mount SMB package (DO-214AA).
600W.
-65°C to 150°C.