| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
210 pcs
|
210 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Current - Average Rectified (Io) | |
| Current - Reverse Leakage @ Vr | |
| Differential Forward Resistance (rD) | |
| Diode Capacitance (Cd) | |
| Diode Configuration | |
| Halogen Free | |
| Industrial Grade | |
| Lead Spacing | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature - Junction | |
| Package / Case | |
| SVHC Present | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Voltage | |
| Voltage - DC Reverse (Vr) (Max) | |
| Voltage - Forward (Vf) (Max) @ If |
The 1PS70SB84,115 from Nexperia USA Inc. is a Schottky barrier double diode configured as 1 pair series connection. Rated for 15V maximum reverse voltage and 30mA average rectified current, it features a typical forward voltage of 700 mV at 30 mA and a reverse leakage current of 200 nA at 1 V. The junction operating temperature maximum is 125 °C.
The device is housed in a small SOT323 (SC-70) surface-mount plastic package, suitable for compact designs. It offers low diode capacitance of 1 pF (typical) and a differential forward resistance of 12 Ω (typical at 5 mA), making it well-suited for UHF mixers, sampling circuits, modulators, and phase detectors.
Designated small signal speed (<=200 mA), this diode array supports general-purpose rectification and switching in low-power applications. Compliance information includes RoHS3, REACH Unaffected, and MSL Level 1, though these have not been independently verified.
15 V.
30 mA (average rectified).
700 mV typical at 30 mA forward current.
Surface-mount SOT323 (SC-70).
Maximum junction temperature is 125°C.
200 nA typical at 1 V reverse voltage.
1 pF typical at 0 V, 1 MHz.