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10 pcs
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10 pcs | On Request | 10 | On Request | On Request | On Request | On Request | On Request |
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The 1N649-1 from Microsemi Corporation is a hermetically sealed silicon rectifier diode. It features a metallurgically bonded construction and a double plug design, housed in a DO-35 glass package.
This rectifier is rated for a maximum DC reverse voltage of 600V and can handle a surge current of 5.0A for 8.3ms. It operates reliably within a temperature range of -65°C to +175°C. The diode has a maximum forward voltage drop of 1.00V at 400mA and 25°C, and a reverse leakage current of 0.050µA at 600V and 25°C.
With a total power dissipation of 500mW, the 1N649-1 is suitable for various general-purpose rectification applications. Its robust construction ensures durability and consistent performance in demanding environments. The through-hole mounting type facilitates easy integration into circuit boards.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum DC reverse voltage (VRWM) for the 1N649-1 is 600V.
The 1N649-1 has a surge current rating of 5.0A for a sine wave of 8.3ms duration.
The 1N649-1 operates between -65°C and +175°C.
The forward voltage drop at 400mA and 25°C is between 0.80V and 1.00V.
The reverse leakage current at 600V and 25°C is a maximum of 0.050µA.
The 1N649-1 is supplied in a DO-35 glass package.