| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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48 pcs
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48 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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The 1N647-1 is a hermetically sealed, metallurgically bonded silicon rectifier diode. It is designed for applications requiring a reliable rectifier with a maximum reverse voltage rating of 400V.
Key electrical characteristics include a maximum forward voltage of 1.00V at 400mA and a maximum reverse current of 0.050µA at 400V and 25°C. The diode can handle a surge current of 5.0A for 8.3ms (sine wave).
This component has a total power dissipation of 500mW and operates within a temperature range of -65°C to +175°C. It is housed in a DO-35 glass package with through-hole mounting.
The 1N647-1 is available in JAN, JANTX, and JANTXV specifications per MIL-PRF-19500/240.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.40 | $0.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
400V.
400mA at 25°C.
1.0V maximum at 25°C.
DO-35 through-hole.
-65°C to +175°C.
5.0A (8.3ms sine).
500mW maximum.