FGY160T65SPD-F085
On Semiconductor
The On Semiconductor FGY160T65SPD-F085 is an IGBT transistor designed for power management applications. It features a 650V breakdown voltage and 240A continuous collector current.
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Microchip Technology 1N6156A is a unidirectional Transient Voltage Suppressor (TVS) diode engineered for robust overvoltage protection. This component features a reverse standoff voltage of 29.7V and a minimum breakdown voltage of 37.1V. It can handle a peak pulse current of 28A (10/1000µs), resulting in a clamping voltage of 53.6V and a peak pulse power dissipation of 1500W.
Designed for general-purpose applications, the 1N6156A operates within a wide temperature range of -55°C to 175°C (TJ). Its axial package and through-hole mounting make it suitable for integration into various electronic circuits. This TVS diode is commonly used in industrial, automotive, and consumer electronics sectors to protect sensitive circuitry from transient voltage events.
The device is supplied in bulk packaging.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical reverse standoff voltage is 29.7V.
The minimum breakdown voltage is 37.1V.
The maximum clamping voltage is 53.6V at a peak pulse current of 28A (10/1000µs).
The peak pulse power dissipation is 1500W (1.5kW).
The operating temperature range is -55°C to 175°C.
The 1N6156A is supplied in an axial package (B, Axial) and uses through-hole mounting.
