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24,887 pcs
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24887 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The On Semiconductor FGY160T65SPD is a Trench Field Stop IGBT transistor designed for demanding power applications. It offers a high collector-emitter breakdown voltage of 650V and a continuous collector current rating of 240A, with a pulsed current capability of 480A.
This device has a maximum power dissipation of 882W and a low on-state voltage (Vce(on)) of 2.05V at 160A and 15V gate-emitter voltage. Switching characteristics include turn-on delay (Td(on)) of 53ns and turn-off delay (Td(off)) of 98ns at 25°C, with a reverse recovery time (trr) of 132ns.
The FGY160T65SPD operates within a temperature range of -55°C to 175°C. It is housed in a TO-247-3 package and utilizes a through-hole mounting type, making it suitable for various industrial and automotive applications requiring robust power handling.
This component is part of the Automotive, AEC-Q101 series, indicating its suitability for automotive environments. It complies with RoHS3 standards.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 650 V.
The maximum continuous collector current is 240 A.
The maximum power dissipation is 882 W.
The operating temperature range is -55°C to 175°C.
This IGBT is in a TO-247-3 package.
This component is mounted using the through-hole method.