TMBT3906.LMT
Toshiba
The Toshiba TMBT3906.LMT is a single bipolar junction transistor (BJT) in the Transistors - Bipolar (BJT) - Single category. It is RoHS3 Compliant and has an MSL rating of 1 Unlimited.
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1,924 pcs
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1924 pcs | On Request | 1 | On Request | On Request | 922 | On Request | On Request |
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The 1N5822-E3\1 from Vishay Dale is a Schottky diode characterized by its low forward voltage drop and high frequency operation. It is suitable for applications requiring fast switching speeds and efficient power conversion.
Key electrical specifications include a maximum average forward current (IF(AV)) of 3A and a maximum repetitive peak reverse voltage (VRRM) of 40V. The forward voltage (VF) is typically 0.5V, with a maximum of 0.525V. It also offers a high forward surge capability of 80A.
This diode is housed in a DO-201AD package, designed for through-hole mounting. Its features, such as guardring for overvoltage protection and very small conduction losses, make it ideal for use in low voltage high frequency inverters, freewheeling circuits, DC/DC converters, polarity protection, and switched-mode power supplies.
The 1N5822 Schottky diode requires a low forward voltage to conduct, making it efficient in various power electronics designs.
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| 1+ | $1.21 | $1.21 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum average forward current for the 1N5822 is 3A.
The maximum repetitive peak reverse voltage of the 1N5822 is 40V.
The typical forward voltage drop for the 1N5822 is 0.5V.
The maximum operating junction temperature for the 1N5822 is 125°C.
The 1N5822 diode is supplied in the DO-201AD package.