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1N5811USE3 DIODE GEN PURP 150V 3A B SQ-MELF
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1N5811USE3

Mfr Name: Microchip Technology
Microchip Technology
DIODE GEN PURP 150V 3A B SQ-MELF
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1N5811USE3 Specifications Quick View

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Operating Temperature
Reverse Recovery Time (trr)
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1N5811USE3 Description

Short technical summary and product information.
DIODE GEN PURP 150V 3A B SQ-MELF

1N5811USE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

1N5811USE3 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
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1N5811US
1N5811US
Microchip Technology
The 1N5811US is a 150V, 3A ultrafast recovery rectifier diode from Microchip Technology in a surface mount SQ-MELF package.
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JANTX1N5809US
JANTX1N5809US
Microchip Technology
JANTX1N5809US is a 100V, 3A fast recovery rectifier diode from Microchip Technology. It features a 30ns reverse recovery time and 875mV forward voltage in a surface mount SQ-MELF package.
View Part
JANS1N5811US
JANS1N5811US
Microchip Technology
JANS1N5811US is a 150V, 3A fast recovery rectifier diode by Microchip Technology. It features 30ns reverse recovery time and is housed in a surface mount SQ-MELF package.
View Part
1N5811US/TR
1N5811US/TR
Microchip Technology
DIODE GEN PURP 150V 3A B SQ-MELF
View Part
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