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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 1N5630A from STMicroelectronics is a silicon avalanche diode designed for transient voltage suppression. It is hermetically sealed in a DO-13 metal case with axial leads, making it suitable for through-hole mounting.
This diode offers a peak pulse power rating of 1500 Watts for a 10 x 1000µs waveform at 25°C, with a 1 watt steady-state power capability. It has a fast response time of 1 x 10^-12 seconds. The operating and storage temperature range is -55°C to +150°C.
Key electrical characteristics include a reverse stand-off voltage of 5.5V, a breakdown voltage ranging from 6.12V to 7.48V at 10mA, a maximum reverse leakage of 1000µA at VR, a maximum clamping voltage of 10.8V at IPP, and a maximum peak pulse current of 139A.
The 1N5630A is recognized under the Underwriters Laboratories Components Program (File Number E128662). It is available in bulk packaging with 500 pieces per package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 1N5630A has a peak pulse power of 1500 Watts for a 10 x 1000µs waveform at 25°C.
The operating and storage temperature range for the 1N5630A is -55°C to +150°C.
The breakdown voltage (VBR) at 10mA is a minimum of 6.12V and a maximum of 7.48V.
The reverse stand-off voltage (VR) for the 1N5630A is 5.5V.
The 1N5630A is supplied in a DO-13 metal hermetically sealed package.