| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,050 pcs
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2050 pcs | On Request | 1 | On Request | On Request | 89+ | On Request | On Request |
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The SEMICON 1N5630A is a silicon avalanche diode designed for transient voltage suppression applications. It offers a peak pulse power rating of 1500 Watts for a 10 x 1000µs waveform at 25°C and a 1 watt steady-state power capability.
This TVS diode has a breakdown voltage minimum of 6.12V and a maximum of 7.48V at 10mA. The reverse leakage current is a maximum of 1000µA at a reverse stand-off voltage of 5.50V. The maximum clamping voltage is 10.8V at a peak pulse current of 139A.
Featuring a glass-passivated junction and hermetically sealed metal DO-13 package, the 1N5630A is suitable for operation and storage temperatures ranging from -55°C to +150°C. Its terminals are axial leads, solderable per MIL-STD-202 Method 208.
This device is recognized under the Underwriters Laboratories Components Program, with Agency File Number E128662.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The nominal Stand-off Voltage of the 1N5630A is 5.5 V.
The Breakdown Voltage for the 1N5630A ranges from a minimum of 6.12 V to a maximum of 7.48 V, measured at IT = 10mA.
The maximum Clamping Voltage of the 1N5630A is 10.8 V when the Peak Pulse Current (Ipp) is 139 A.
The maximum Peak Pulse Current for the 1N5630A is 139 A, measured with a 10 x 1000µs waveform.
The 1N5630A is supplied in a DO-13 package and is designed for Through Hole mounting.
The Peak Pulse Power of the 1N5630A is 1500 W, measured with a 10 x 1000µs waveform at 25°C.
The 1N5630A can operate and be stored within a temperature range of -55°C to +150°C.