| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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601 pcs
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601 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The JAN1N5619US from Microchip Technology is a general purpose diode designed for various applications. It offers a maximum reverse voltage of 600V and an average rectified current of 1A. This diode boasts a fast recovery time of 250 ns, making it suitable for applications requiring quick switching.
This component is rated for a forward voltage of 1.6V at 3A and has a low reverse leakage current of 500 nA at 600V. Its capacitance is 25pF at 12V and 1MHz. The JAN1N5619US is qualified to military standards (MIL-PRF-19500/429).
Designed for surface mounting, the diode comes in a SQ-MELF, A package, with the supplier device package identified as D-5A. It is supplied in bulk packaging.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage (Vr) for the JAN1N5619US diode is 600 V.
The average rectified current (Io) for the JAN1N5619US diode is 1A.
The maximum forward voltage (Vf) for the JAN1N5619US diode at 3A is 1.6 V.
The reverse recovery time (trr) for the JAN1N5619US diode is 250 ns.
The JAN1N5619US diode is in a SQ-MELF, A package and is designed for surface mounting.
Yes, the JAN1N5619US diode has military qualification MIL-PRF-19500/429.