| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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43 pcs
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43 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The JAN1N5619US is a general purpose diode manufactured by Microchip Technology. This component is designed for RF applications and features a maximum reverse voltage of 600V and an average rectified current of 1A.
Key electrical characteristics include a forward voltage of 1.6V at 3A and a reverse leakage current of 500 nA at 600V. The diode has a fast recovery time of 250 ns, making it suitable for various switching applications. Its capacitance is rated at 25 pF at 12V and 1MHz.
This diode is housed in a surface mount SQ-MELF, A package with a D-5A supplier device package. It is suitable for military-grade applications, with qualification under MIL-PRF-19500/429.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage (Vr) for the JAN1N5619US diode is 600 V.
The average rectified current (Io) for the JAN1N5619US diode is 1A.
The maximum forward voltage (Vf) for the JAN1N5619US diode at 3A is 1.6 V.
The reverse recovery time (trr) for the JAN1N5619US diode is 250 ns.
The JAN1N5619US diode is supplied in a surface mount SQ-MELF, A package, with a D-5A supplier device package.