| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 1N4148 from Varitronix is a silicon epitaxial planar diode designed for high-speed switching applications. It offers a repetitive peak reverse voltage of 100V and a reverse voltage of 75V. The diode can handle a forward continuous current of 300mA and an average forward current of 150mA.
Key electrical characteristics include a maximum forward voltage of 1V at 10mA and a maximum reverse leakage current of 25nA at 20V. The diode capacitance is a maximum of 4pF at 0V and 1MHz. Its fast switching capability is highlighted by a reverse recovery time as low as 4ns under specific conditions.
Packaged in a DO-35 (DO-204AH) case, the 1N4148 is suitable for through-hole mounting. The operating junction temperature can reach up to 175°C, with a storage temperature range of -65°C to +150°C. This diode is electrically equivalent to the 1N914.
Applications for the 1N4148 include extreme fast switching circuits. Its robust specifications make it a reliable choice for various electronic designs requiring rapid signal processing.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.20 | $1.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive peak reverse voltage for the 1N4148 is 100V.
The maximum average rectified current is 200mA.
The maximum forward voltage is 1V when the forward current is 10mA.
The reverse recovery time is 4ns.
The maximum reverse current is 25nA at a reverse voltage of 20V.
The diode capacitance is 4pF at 0V and 1MHz.
The maximum junction temperature is 175°C.