| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,665 pcs
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4665 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 1N4148 is a silicon epitaxial planar diode designed for extreme fast switching applications. It offers a repetitive peak reverse voltage of 100V and a reverse voltage of 75V. The forward continuous current is rated at 300mA, with an average forward current of 150mA.
Key electrical characteristics include a forward voltage of 1V at 10mA and a reverse recovery time as low as 4ns. The diode capacitance is typically 4pF at 0V and 1MHz. It operates over a junction temperature range of -65°C to +175°C.
Packaged in a DO-35 (DO-204AH) case, this diode is suitable for through-hole mounting. It is electrically equivalent to the 1N914 diode.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive peak reverse voltage is 100V.
The average forward current is 150mA (datasheet).
The forward voltage is maximum 1V at 10mA.
The typical reverse recovery time is 4ns under specified conditions.
The 1N4148 comes in a DO-35 (DO-204AH) axial through-hole package.
The reverse leakage current is maximum 25nA at 20V and 5μA at 75V.
The typical diode capacitance is 4pF at 0V and 1MHz.
