| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
317 pcs
|
317 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request | |
|
51 pcs
|
51 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Halogen Free | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade |
The 1N4006 is a general purpose rectifier diode manufactured by Vishay Dale. It is designed for applications requiring a reliable and robust rectification solution.
Key electrical characteristics include a maximum recurrent peak reverse voltage of 1000V, a maximum RMS voltage of 700V, and a maximum DC blocking voltage of 1000V. The diode can handle a maximum average forward rectified current of 1A at 100°C and a non-repetitive peak forward surge current of 30A for 8.3ms. The maximum forward voltage drop at 1.0A is 1V, and the maximum DC reverse current at rated voltage is 200μA.
This rectifier diode features an open junction chip construction, providing low reverse leakage and high forward surge current capability. It is housed in a DO-41 molded plastic body with polarity marking. The mounting position can be any.
Environmental compliance includes RoHS3 compliance and Halogen Free status. The operating and storage temperature range is -55°C to +150°C. The typical junction capacitance is 21pF measured at 1MHz and 4.0V DC reverse voltage. The typical thermal resistance is 65°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.44 | $0.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum average forward rectified current is 1A at a lead temperature of 100°C.
The maximum repetitive peak reverse voltage is 1000V.
The maximum forward voltage is 1V at a forward current of 1A.
The 1N4006 is packaged in a DO-41 through-hole package.
The operating junction and storage temperature range is -55°C to +150°C.
The non-repetitive peak forward surge current is 30A for an 8.3ms single half-sine wave.
The typical junction capacitance is 21pF measured at 1MHz and a reverse voltage of 4V DC.