| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 10N60L from UTC is an N Channel MOSFET designed for power switching applications. It features a high drain-source voltage rating of 600V and can handle a continuous drain current of 10A at 25°C. The gate threshold voltage is specified at 4V with a drain current of 250uA, and the on-resistance is a maximum of 750mOhm at 5A and 10V gate-source voltage.
This MOSFET has a maximum power dissipation of 50W at a case temperature of 25°C. It is housed in a TO-220F1 package, suitable for through-hole mounting. The component is classified under RoHS3 compliance and has an MSL rating of 1.
This device is suitable for various power electronics designs requiring a robust and reliable N-channel MOSFET with a high voltage capability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vds) is 600V.
The continuous drain current (Id) is 10A at 25°C.
The gate threshold voltage (Vgs(th)) is 4V at 250uA.
The maximum drain-source on-resistance (Rds(on)) is 750mOhm at 5A and 10V.
The package type is TO-220F1.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.