| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
422 pcs
|
422 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
400 pcs
|
400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| FET Type | |
| Industrial Grade | |
| Lead Spacing | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Power Dissipation | |
| Tape & Reel |
The Infineon IRF520PBF is an N-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 9.2A at 25°C. The gate threshold voltage (Vgsth) is 4V at 250uA, and the on-resistance (Rds_on) is a maximum of 270 mΩ at 5.5A and 10V.
This MOSFET has a maximum power dissipation (Pd) of 60W and is housed in a standard TO-220 package, suitable for through-hole mounting. Its N-channel trench FET type makes it a versatile component for various electronic designs.
Key electrical characteristics include a 100V drain-source voltage and 9.2A continuous drain current. The TO-220 package facilitates easy integration into circuit boards for applications requiring moderate power handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 100V.
The continuous drain current (Id) is 9.2A at 25°C.
The gate threshold voltage (Vgsth) is 4V at 250uA.
The on-resistance (Rds_on) is a maximum of 270 mΩ at 5.5A and 10V.
The maximum power dissipation (Pd) is 60W.
The IRF520PBF is in a TO-220 package.