BSC110N06NS3
Infineon Technologies
The Infineon Technologies BSC110N06NS3 is an N-channel MOSFET designed for power applications. It offers a 60V breakdown voltage and a high continuous drain current capability.
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188 pcs
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188 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The 10BQ015 from N-A is a Schottky rectifier designed for various electronic applications. It features a low forward voltage drop and high-frequency operation, making it suitable for switching power supplies, converters, and redundant power subsystems. The device is housed in a compact SMB package, facilitating surface mounting.
Key electrical characteristics include a peak repetitive reverse voltage of 15V and a working peak reverse voltage of 25V. The average rectified forward current is rated at 1A. Its junction temperature range is -55°C to +125°C, with a typical thermal resistance junction to case of 80°C/W.
Applications for the 10BQ015 include disk drives, reverse battery protection, and battery charging systems. The component is designed with a guard ring for enhanced ruggedness and long-term reliability. It is also a Pb-Free device, contributing to environmental compliance in electronic designs.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak repetitive reverse voltage for the 10BQ015 is 15V.
The average rectified forward current for the 10BQ015 is 1A.
The typical forward voltage drop at 1A and 25°C is 0.33V.
The operating junction temperature range for the 10BQ015 is -55°C to +125°C.
The 10BQ015 is available in the SMB package.
Yes, the 10BQ015 is a Pb-Free device.