| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
22,281 pcs
|
22281 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present | |
| Storage Temperature | |
| Tape & Reel |
The BSC110N06NS3 from Infineon Technologies is a high-performance N-channel MOSFET. It features a drain-source breakdown voltage of 60V and a maximum continuous drain current of 110A at 25°C.
With a low typical on-resistance (RDS(on)) of 11 mOhm at 10V gate-source voltage and 25A drain current, this MOSFET is suitable for various power switching applications. The typical gate charge is 55 nC, and input capacitance is 1500 pF.
This device operates within a junction temperature range of -55°C to +175°C. It is supplied in a surface-mount PG-TDSON-8 package, with a standard package quantity of 2500 units on tape and reel.
The BSC110N06NS3 is designed for applications requiring efficient power handling and switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V minimum.
PG-TDSON-8 surface-mount package.
-55°C to +175°C junction temperature.
11 mOhm at VGS=10V, ID=25A.
110A at TC=25°C.
55 nC typical at VGS=10V, ID=25A.
1500 pF typical.