Parts from this manufacturer
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Compare stocked parts across distributors, then add lines to your RFQ.
| Part & Mfr | Total Stock | Pricing & RFQ | |
|---|---|---|---|
On Semiconductor
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212,706
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Price on request
212,706
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On Semiconductor
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212,502
|
Price on request
212,502
|
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On Semiconductor
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212,145
|
Price on request
212,145
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On Semiconductor
|
212,007
|
Price on request
212,007
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On Semiconductor
|
212,000
|
Price on request
212,000
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On Semiconductor
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211,987
|
Price on request
211,987
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On Semiconductor
|
211,931
|
Price on request
211,931
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On Semiconductor
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211,800
|
Price on request
211,800
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On Semiconductor
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211,400
|
Price on request
211,400
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On Semiconductor
|
210,692
|
Price on request
210,692
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On Semiconductor
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210,362
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Price on request
210,362
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On Semiconductor
|
210,115
|
Price on request
210,115
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On Semiconductor
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210,000
|
Price on request
210,000
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On Semiconductor
<p>The 1N4752A-T50A is a Zener diode from On Semiconductor, designed for voltage regulation and overvoltage protection applications. It provides a nominal Zener voltage of 33V with a tolerance of ±5%.</p><p> </p><p>This diode can dissipate up to 1W of power, with a low maximum impedance of 45Ω at the test current for stable regulation. Reverse leakage current is limited to 5µA at 25.1V.</p><p> </p><p>The device is housed in a through-hole DO-41 (DO-204AL) axial lead package, suitable for manual or automatic insertion. It operates over a wide temperature range from -65°C to 200°C, making it robust for industrial environments.</p>
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210,000
|
Price on request
210,000
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On Semiconductor
<p>The BZX85C12-T50R is a Zener diode from ON Semiconductor designed for voltage regulation and overvoltage protection applications. It is housed in a DO-204AL (DO-41) axial-lead through-hole package, suitable for automated insertion and manual assembly.</p><p> </p><p>Key electrical characteristics include a nominal Zener voltage of 12V with a tolerance of ±5%, maximum power dissipation of 1W, and a maximum impedance of 9Ω at the nominal Zener voltage. The forward voltage is typically 1.2V at 200mA forward current, and reverse leakage current is 500nA at 8.4V. The device operates over a wide temperature range from -65°C to 200°C.</p><p> </p><p>This Zener diode is commonly used in low-power voltage regulation, clamping, and protection circuits. Its robust construction ensures reliable performance in industrial and consumer electronics.</p><p> </p><p>Environmental compliance includes RoHS3 compliance, REACH unaffected status, and Moisture Sensitivity Level 1 (unlimited). Cross-reference part numbers for DigiKey are available.</p>
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210,000
|
Price on request
210,000
|
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On Semiconductor
|
210,000
|
Price on request
210,000
|
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On Semiconductor
|
209,935
|
Price on request
209,935
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|
On Semiconductor
|
209,690
|
Price on request
209,690
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On Semiconductor
|
208,885
|
Price on request
208,885
|
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On Semiconductor
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208,758
|
Price on request
208,758
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On Semiconductor
|
208,666
|
Price on request
208,666
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On Semiconductor
|
208,500
|
Price on request
208,500
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On Semiconductor
|
208,261
|
Price on request
208,261
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On Semiconductor
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208,020
|
Price on request
208,020
|
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On Semiconductor
<p>The ESD7410MXWT5G is an ultra-low capacitance ESD protection diode designed by On Semiconductor to protect voltage sensitive components from electrostatic discharge and transient voltage events. It features a reverse standoff voltage of 10 V and a maximum breakdown voltage of 19.4 V. The device offers exceptional capacitance linearity over voltage, making it ideal for RF applications. With a typical capacitance of 0.35 pF at 1 GHz and a maximum of less than 1.0 pF, it maintains signal integrity in high-frequency circuits. Insertion loss is only 0.1 dB at 1 GHz and 0.3 dB at 3 GHz. The ESD7410MXWT5G provides robust ESD protection meeting IEC61000-4-2 Level 4 with ±30 kV contact and air discharge, and ISO 10605 standards. It is housed in a 2-XDFN surface mount package with wettable flanks (2-X2DFNW 1x0.6) for automated optical inspection. The device is RoHS3 compliant, Pb-Free, and Halogen Free.</p>
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208,000
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Price on request
208,000
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On Semiconductor
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208,000
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Price on request
208,000
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On Semiconductor
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208,000
|
Price on request
208,000
|
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On Semiconductor
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208,000
|
Price on request
208,000
|
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On Semiconductor
|
208,000
|
Price on request
208,000
|
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On Semiconductor
|
208,000
|
Price on request
208,000
|
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On Semiconductor
|
208,000
|
Price on request
208,000
|
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On Semiconductor
|
208,000
|
Price on request
208,000
|
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On Semiconductor
|
207,936
|
Price on request
207,936
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|
On Semiconductor
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207,900
|
Price on request
207,900
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On Semiconductor
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207,838
|
Price on request
207,838
|
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On Semiconductor
|
207,743
|
Price on request
207,743
|
|
On Semiconductor
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207,000
|
Price on request
207,000
|
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On Semiconductor
|
206,970
|
Price on request
206,970
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On Semiconductor
|
206,771
|
Price on request
206,771
|
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On Semiconductor
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206,702
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Price on request
206,702
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On Semiconductor
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206,406
|
Price on request
206,406
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On Semiconductor
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206,384
|
Price on request
206,384
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On Semiconductor
|
206,000
|
Price on request
206,000
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On Semiconductor
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205,908
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Price on request
205,908
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On Semiconductor
<p>On Semiconductor BAV70 is a dual common cathode switching diode configured as a pair of diodes with a common cathode. It is designed for general purpose switching applications requiring fast switching speeds and high conductance.</p><p> </p><p>Key electrical ratings include a reverse voltage of 70V, forward current of 200mA, and non-repetitive peak forward surge current of 2.0A at 8.3ms. The device has a maximum forward voltage of 1.25V at 150mA, with typical values ranging from 0.715V at 1mA to 1.0V at 50mA. Reverse leakage current is 2.5µA maximum at 70V. The reverse recovery time is 6ns maximum, making it suitable for high-speed switching.</p><p> </p><p>The device is housed in a surface mount SOT-23 package (TO-236-3, SC-59) and supports operation over a junction temperature range of -55°C to +150°C. Power dissipation is 225mW, with thermal resistance of 556°C/W junction-to-ambient. The package is RoHS3 compliant and Pb-free.</p>
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205,765
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Price on request
205,765
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On Semiconductor
|
205,674
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Price on request
205,674
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On Semiconductor
<p>The ESDR0524SMUTAG is a TVS diode from On Semiconductor designed for ESD protection on high-speed data lines. It features a reverse working voltage of 5V and a maximum clamping voltage of 15V at 1A peak pulse current (8/20µs). The device offers ultra-low junction capacitance of 0.3pF typical between I/O pins, making it suitable for high-speed differential signals such as HDMI. It provides ESD protection up to ±12kV contact and ±15kV air discharge per IEC 61000-4-2, and exceeds 8kV HBM and 400V Machine Model. The device is housed in a 10-UDFN package (2.5x1mm) with a flow-through style for easy PCB layout and matched trace lengths. It is lead-free, RoHS3 compliant, and REACH unaffected. The operating temperature range is -55°C to 125°C.</p>
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205,585
|
Price on request
205,585
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On Semiconductor
|
205,511
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Price on request
205,511
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On Semiconductor
|
205,455
|
Price on request
205,455
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On Semiconductor
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205,337
|
Price on request
205,337
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