INT

<p>The 2N6782 is a single, high-reliability N-channel power MOSFET manufactured by Infineon Technologies. It is designed for applications requiring fast switching, such as motor controls and power supplies.</p><p>&nbsp;</p><p>Key electrical characteristics include a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 3.5A at 25°C case temperature, derating to 2.25A at 100°C. The pulsed drain current (IDM) can reach up to 14A. The gate source voltage (VGS) is rated at ±20V. The device has a maximum power dissipation of 15W at 25°C, with a junction-to-case thermal resistance that allows for efficient heat management.</p><p>&nbsp;</p><p>This MOSFET is housed in a TO-39 (TO-205AF) package, suitable for through-hole mounting. The operating and storage temperature range is -55°C to +150°C. Applications include fast switching circuits, motor controls, and power supplies.</p>

<p>The AHE2805SF/ES is a transistor array from manufacturer INT. This component is categorized under Discrete Semiconductor Products, specifically within Transistors - FETs, MOSFETs - Arrays.</p><p>&nbsp;</p><p>Key compliance information indicates that the part is RoHS3 Compliant and has a Moisture Sensitivity Level (MSL) of 1 Unlimited. The REACH status is noted as Unaffected. No specific technical electrical, mechanical, or thermal specifications are available in the provided data.</p><p>&nbsp;</p><p>Further details regarding package type, mounting, and specific application suitability would typically be found in the product datasheet, which is not currently linked. The product image is a placeholder, indicating that specific visual information is also unavailable.</p>