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| Part & Mfr | Total Stock | Pricing & RFQ | Channel Type | Current | Driven Configuration | Gate Type | High Side Voltage | Input Type | Logic Voltage | Mounting Type | Number of Drivers | Operating Temperature | Rise | Supplier Device Package | Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas
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Independent | 2A, 2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 7.5ns, 10ns | 8-SOIC | 4.5V ~ 15V | |
Infineon Technologies
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Single | 250mA, 500mA | High-Side | IGBT, N-Channel MOSFET | 600 V | Inverting | 6V, 9.5V | Through Hole | 1 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-PDIP | 10V ~ 20V | |
Infineon Technologies
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Synchronous | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.9V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 130ns, 50ns | 8-SOIC | 5V ~ 20V | |
Renesas
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 114 V | Non-Inverting | 1.4V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 10ns, 10ns | 8-SOIC | 9V ~ 14V | |
IXYS
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Single | 9A, 9A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Through Hole | 1 | -55°C ~ 150°C (TJ) | 22ns, 15ns | TO-220-5 | 4.5V ~ 35V | |
IXYS
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Single | 9A, 9A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Through Hole | 1 | -55°C ~ 150°C (TJ) | 22ns, 15ns | TO-220-5 | 4.5V ~ 35V | |
Texas Instruments
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Independent | 1.2A, 5A | Half-Bridge | N-Channel MOSFET | 107 V | Non-Inverting | 1.76V, 1.89V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 7ns, 1.5ns | 12-DSBGA | 4.5V ~ 5.5V | |
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Infineon Technologies
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Synchronous | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 200 V | Non-Inverting | 0.8V, 2.5V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 70ns, 35ns | 8-PDIP | 10V ~ 20V | |
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IXYS
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Independent | 4A, 4A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 3V | Through Hole | 2 | -40°C ~ 125°C (TA) | 9ns, 8ns | 8-DIP | 4.5V ~ 35V | |
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Infineon Technologies
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Synchronous | 210mA, 360mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 3V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 100ns, 50ns | 8-PDIP | 10V ~ 20V | |
Microchip Technology
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Single | 1.5A, 1.5A | High-Side or Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Through Hole | 1 | 0°C ~ 150°C (TJ) | 25ns, 33ns | 8-PDIP | 4.5V ~ 30V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Through Hole | 1 | 0°C ~ 150°C (TJ) | 25ns, 25ns | TO-220-5 | 4.5V ~ 18V | |
Analog Devices Inc./Maxim Integrated
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Synchronous | 2.4A, 2.4A | Half-Bridge | N-Channel MOSFET | 42 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 12ns, 8ns | 8-MSOP-EP | 6V ~ 9.5V | |
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Infineon Technologies
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Single | 250mA, 500mA | High-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 6V, 9.5V | Through Hole | 1 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-PDIP | 10V ~ 20V | |
Infineon Technologies
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Independent | 2.5A, 2.5A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 6V, 9.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 25ns, 17ns | 16-SOIC | 10V ~ 20V | |
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Microchip Technology
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Single | - | High-Side | IGBT, N-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Through Hole | 1 | -40°C ~ 85°C (TA) | 400ns, 400ns | 8-PDIP | 12V ~ 36V | |
Renesas
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3-Phase | 1A, 2A | Half-Bridge | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 3 | -40°C ~ 125°C (TA) | 40ns, 40ns | 48-QFN (7x7) | 4.5V ~ 60V | |
Infineon Technologies
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Synchronous | 180mA, 260mA | Half-Bridge | N-Channel MOSFET | 600 V | RC Input Circuit | - | Through Hole | 2 | -40°C ~ 125°C (TJ) | 120ns, 50ns | 8-PDIP | 10V ~ 15.4V | |
Infineon Technologies
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Independent | 2A, 3A | Half-Bridge | IGBT | 1200 V | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 24ns, 7ns | 24-SSOP | 11.5V ~ 20V | |
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Infineon Technologies
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- | - | - | - | - | - | - | - | - | - | - | - | - | |
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Infineon Technologies
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Single | 250mA, 500mA | High-Side or Low-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 3V | Through Hole | 1 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-PDIP | 12V ~ 20V | |
Analog Devices Inc./Maxim Integrated
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | 0°C ~ 70°C (TA) | 25ns, 25ns | 8-SOIC | 4.5V ~ 18V | |
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Texas Instruments
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Independent | 1.6A, 1.6A | Half-Bridge | N-Channel MOSFET | 118 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 600ns, 600ns | 8-SOIC | 9V ~ 14V | |
IXYS
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Single | 14A, 14A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 25ns, 18ns | 8-SOIC-EP | 4.5V ~ 35V | |
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IXYS
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Single | 14A, 14A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 25ns, 18ns | 8-SOIC-EP | 4.5V ~ 35V | |
Analog Devices Inc./Maxim Integrated
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Single | - | High-Side | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 1 | -40°C ~ 125°C (TA) | - | 16-TQFN (3x3) | 9V ~ 70V | |
Renesas
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Independent | 3A, 4A | Half-Bridge | N-Channel MOSFET | 114 V | Non-Inverting | 1.4V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 9ns, 7.5ns | 10-TDFN (4x4) | 8V ~ 14V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2.5A, 3A | Half-Bridge | N-Channel MOSFET | 114 V | Non-Inverting | 1.85V, 3.25V | Surface Mount | 2 | -40°C ~ 85°C | 8ns, 5ns | 8-MSOP-EP | 7.2V ~ 13.5V | |
Microchip Technology
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Independent | 1.2A, 1.2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Through Hole | 4 | -40°C ~ 150°C (TJ) | 15ns, 15ns | 14-PDIP | 4.5V ~ 18V | |
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Analog Devices Inc./Maxim Integrated
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 85°C (TA) | 25ns, 25ns | 8-SOIC | 4.5V ~ 18V | |
Infineon Technologies
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Independent | 250mA, 500mA | High-Side or Low-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 6V, 9.5V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 14-DIP | 10V ~ 20V | |
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Microchip Technology
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Single | - | High-Side or Low-Side | N-Channel MOSFET | - | Non-Inverting | 2V, 4.5V | Surface Mount | 1 | -40°C ~ 85°C (TA) | - | 8-SOIC | 7V ~ 32V | |
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Analog Devices Inc./Maxim Integrated
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Independent | - | - | N-Channel MOSFET | - | Inverting | 0.8V, 2V | Through Hole | 2 | 0°C ~ 150°C (TJ) | 20ns, 20ns | 8-PDIP | 4.5V ~ 17V | |
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Infineon Technologies
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Analog Devices Inc./Maxim Integrated
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Single | 1.1A, 1.1A | High-Side | N-Channel MOSFET | 80 V | Non-Inverting | 1.2V, 1.6V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | 10ns, 7ns | 8-MSOP-EP | 4V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Single | - | High-Side | N-Channel MOSFET | - | Non-Inverting | 0.6V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | - | 8-uMAX/uSOP | 5V ~ 26V | |
Analog Devices Inc./Maxim Integrated
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Independent | 1.5A, 1.5A | High-Side or Low-Side | N-Channel MOSFET | - | Non-Inverting | 1.7V, 2.2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 16ns, 16ns | 8-SO | 4.5V ~ 13.2V | |
Analog Devices Inc./Maxim Integrated
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Independent | 3A, 3A | Half-Bridge | N-Channel MOSFET | 125 V | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 50ns, 40ns | 8-SOIC-EP | 8V ~ 12.6V | |
Analog Devices Inc./Maxim Integrated
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Single | 1.5A, 1.5A | High-Side | P-Channel MOSFET | - | Inverting, Non-Inverting | 1.7V, 2.2V | Surface Mount | 1 | 0°C ~ 150°C (TJ) | 16ns, 16ns | 8-MSOP | 4.5V ~ 13.2V | |
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Infineon Technologies
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Synchronous | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.9V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 130ns, 50ns | 8-PDIP | 5V ~ 20V | |
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Analog Devices Inc./Maxim Integrated
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Independent | - | High-Side or Low-Side | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 2 | 0°C ~ 70°C (TA) | - | 8-SO | 3.3V ~ 5V | |
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Analog Devices Inc./Maxim Integrated
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Synchronous | - | High-Side | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | - | 8-SO | - | |
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Infineon Technologies
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Independent | 2A, 2.5A | Half-Bridge | IGBT, N-Channel MOSFET | 1200 V | Non-Inverting | 6V, 9.5V | Through Hole | 2 | -55°C ~ 150°C (TJ) | 25ns, 17ns | 14-DIP | 12V ~ 20V | |
IXYS
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Single | 30A, 30A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3.5V | Through Hole | 1 | -55°C ~ 150°C (TJ) | 11ns, 11ns | TO-220-5 | 12.5V ~ 35V | |
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IXYS
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Single | 30A, 30A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3.5V | Through Hole | 1 | -55°C ~ 150°C (TJ) | 11ns, 11ns | TO-220-5 | 12.5V ~ 35V | |
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IXYS
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Single | 30A, 30A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3.5V | Through Hole | 1 | -55°C ~ 150°C (TJ) | 11ns, 11ns | TO-220-5 | 9V ~ 35V | |
IXYS
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Single | 30A, 30A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3.5V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 11ns, 11ns | TO-263-5 | 9V ~ 35V | |
Analog Devices Inc./Maxim Integrated
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Single | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.1V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 32ns, 26ns | 6-TDFN (3x3) | 4V ~ 15V | |
Analog Devices Inc./Maxim Integrated
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Synchronous | 500mA, 500mA | Half-Bridge | N-Channel MOSFET | 56 V | Inverting, Non-Inverting | 0.8V, 2V | Through Hole | 2 | 0°C ~ 125°C (TJ) | 130ns, 120ns | 16-PDIP | 5V ~ 30V | |
Analog Devices Inc./Maxim Integrated
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Synchronous | 3A, 3A | Low-Side | N-Channel MOSFET | - | RC Input Circuit | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 10ns, 10ns | 8-uMAX-EP|8-uSOP-EP | 4.5V ~ 15V | |
Infineon Technologies
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3-Phase | 200mA, 420mA | Half-Bridge | IGBT, N-Channel MOSFET | 1200 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 6 | 125°C (TJ) | 90ns, 40ns | 44-PLCC, 32 Leads (16.58x16.58) | 10V ~ 20V | |
Microchip Technology
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Single | 9A, 9A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Through Hole | 1 | -55°C ~ 150°C (TJ) | 60ns, 60ns | 8-CERDIP | 4.5V ~ 18V | |
Power Integrations
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Independent | 8A, 15A | Half-Bridge | IGBT | 1700 V | - | - | Surface Mount | 2 | -20°C ~ 85°C (TA) | 5ns, 10ns | Module | 14.5V ~ 15.5V | |
Power Integrations
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- | 30A, 30A | Half-Bridge | IGBT | - | - | - | Through Hole | 2 | -40°C ~ 85°C (TA) | - | Module | 14V ~ 16V | |
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Power Integrations
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- | 30A, 30A | Half-Bridge | IGBT | - | - | - | Through Hole | 2 | -40°C ~ 85°C (TA) | - | - | 14V ~ 16V | |
Power Integrations
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Independent | 50A, 50A | High-Side or Low-Side | IGBT | 1700 V | - | - | Surface Mount | 2 | -40°C ~ 85°C (TA) | 25ns, 25ns | Module | 14.5V ~ 15.5V | |
Power Integrations
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Independent | 50A, 50A | High-Side or Low-Side | IGBT | 1700 V | - | - | Surface Mount | 2 | -40°C ~ 85°C (TA) | 25ns, 25ns | Module | 14.5V ~ 15.5V | |
Power Integrations
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Single | 15A, 15A | High-Side or Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | - | 0.9V, 3.8V | Through Hole | 1 | -40°C ~ 85°C (TA) | 40ns, 40ns | Module | 12V ~ 16V | |
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RICHTEK
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Synchronous | - | Half-Bridge | N-Channel MOSFET | 15 V | Inverting, Non-Inverting | 0.7V, 3.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 25ns, 12ns | 8-SOP | 4.5V ~ 13.2V | |
Diodes Incorporated
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Independent | 1A, 3A | Half-Bridge | N-Channel MOSFET | 50 V | Non-Inverting | - | Surface Mount | 2 | 150°C (TJ) | 27ns, 29ns | V-QFN3030-8 (Type TH) | 4.5V ~ 5.5V | |
IXYS
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 10ns, 8ns | 8-DFN (3x3) | 4.5V ~ 30V | |
Texas Instruments
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Single | 2.5A, 5A | Low-Side | IGBT, N-Channel MOSFET | - | Non-Inverting | 1.2V, 2.2V | Surface Mount | 1 | -40°C ~ 140°C (TJ) | 15ns, 7ns | SOT-23-5 | 10V ~ 32V | |
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On Semiconductor
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Single | 3A, 3.2A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 13ns, 9ns | SOT-23-5 | 4.5V ~ 18V | |
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Texas Instruments
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Independent | 4A, 4A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 1V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 20ns, 15ns | 8-SOIC | 4V ~ 15V | |
Texas Instruments
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3-Phase | 750mA, 1.5A | High-Side and Low-Side | N-Channel MOSFET | 105 V | Non-Inverting | 0.8V, 2V | Surface Mount | 3 | -40°C ~ 125°C (TA) | 12ns, 12ns | 24-VQFN (4x4) | 5V ~ 20V | |
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Texas Instruments
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Single | 4A, 4A | Low-Side | IGBT, N-Channel MOSFET | - | Inverting, Non-Inverting | 1V, 2.4V | Surface Mount | 1 | -40°C ~ 140°C (TJ) | 8ns, 7ns | SOT-23-5 | 4.5V ~ 18V | |
STMicroelectronics
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Synchronous | 2A, 2A | Half-Bridge | N-Channel MOSFET | 41 V | Non-Inverting | 1V, 2.3V | Surface Mount | 2 | 0°C ~ 125°C (TJ) | - | 8-SOIC | 5V ~ 12V | |
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Texas Instruments
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Independent | 5A, 5A | Low-Side | IGBT, N-Channel MOSFET | - | Inverting | 1V, 2.3V | Surface Mount | 2 | -40°C ~ 140°C (TJ) | 7ns, 6ns | 8-SOIC | 4.5V ~ 18V | |
Allegro MicroSystems
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Single | 2.7A, 2.7A | Half-Bridge | N-Channel MOSFET | 100 V | Non-Inverting | 1V, 2V | Surface Mount, Wettable Flank | 1 | -40°C ~ 105°C (TA) | 105ns, 46ns | 10-DFN (3x3) | 8V ~ 15V | |
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Texas Instruments
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Single | 1.3A, 7.6A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | 82ns, 12.5ns | SOT-23-6 | 4V ~ 12.6V | |
Texas Instruments
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Single | 1.3A, 7.6A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | 82ns, 12.5ns | 6-WSON (3x3) | 4V ~ 12.6V | |
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Texas Instruments
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Single | 4A, 4A | Low-Side | IGBT, N-Channel MOSFET | - | Inverting, Non-Inverting | 1V, 2.4V | Surface Mount | 1 | -40°C ~ 140°C (TJ) | 8ns, 7ns | SOT-23-5 | 4.5V ~ 18V | |
Microchip Technology
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Independent | 3A, 3A | Half-Bridge | IGBT | - | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C | 12ns, 12ns | 8-SOIC | 4.5V ~ 18V | |
Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 18ns | 8-VDFN (3x3) | 4.5V ~ 20V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 18ns | 8-SOIC-EP | 4.5V ~ 20V | |
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Texas Instruments
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Single | 9A, 9A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 1.1V, 2.7V | Surface Mount | 1 | -40°C ~ 105°C (TA) | 20ns, 20ns | 8-SOIC | 4V ~ 15V | |
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Microchip Technology
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Single | 4.5A, 4.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 9.5ns, 9ns | 8-SOIC | 4.5V ~ 18V | |
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Texas Instruments
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Independent | 1.3A, 1.4A | Half-Bridge | N-Channel MOSFET | 118 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 15ns, 15ns | 8-SOIC | 8V ~ 14V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 18ns | 8-SOIC-EP | 4.5V ~ 20V | |
IXYS
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 10ns, 8ns | 8-SOIC | 4.5V ~ 30V | |
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IXYS
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Independent | 5A, 5A | Low-Side | N-Channel, P-Channel MOSFET | - | CMOS/TTL | 0.8V, 2.5V | Surface Mount | 2 | -55°C ~ 150°C | 7ns, 7ns | 8-SOIC | 5V ~ 20V | |
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Infineon Technologies
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Independent | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.9V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 150ns, 50ns | 8-SOIC | 10V ~ 20V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 125°C | 20ns, 20ns | 8-SOIC | 4.5V ~ 18V | |
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Infineon Technologies
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Single | 250mA, 500mA | High-Side | IGBT, N-Channel MOSFET | 600 V | Inverting | 6V, 9.5V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-SOIC | 10V ~ 20V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 19ns, 19ns | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Single | 2A, 2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | 0°C ~ 150°C (TJ) | 18ns, 18ns | 8-SOIC | 4.5V ~ 16V | |
Microchip Technology
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Independent | 2A, 2A | Half-Bridge | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.3V, 1.7V | Surface Mount | 4 | -20°C ~ 125°C (TJ) | 7ns, 7ns | 16-QFN (3x3) | 5V ~ 10V | |
Infineon Technologies
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Independent | 200mA, 350mA | High-Side or Low-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.9V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 150ns, 50ns | 14-SOIC | 10V ~ 20V | |
Texas Instruments
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Independent | 3A, 5A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 14ns, 12ns | 10-WSON (4x4) | 3.5V ~ 14V | |
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Texas Instruments
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Synchronous | 3A, 4.5A | Half-Bridge | N-Channel MOSFET | 33 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 17ns, 12ns | 8-SOIC | 4V ~ 6.85V | |
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Allegro MicroSystems
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3-Phase | - | High-Side or Low-Side | N-Channel MOSFET | - | TTL | 0.8V, 1.5V | Surface Mount | 6 | -40°C ~ 105°C (TA) | 35ns, 20ns | 28-QFN (5x5) | 5.5V ~ 50V | |
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Microchip Technology
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Single | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 20ns, 20ns | 8-SOIC | 4.5V ~ 16V | |
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Microchip Technology
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Independent | 1.2A, 1.2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 3V | Through Hole | 2 | 0°C ~ 70°C (TA) | 35ns, 25ns | 8-PDIP | 4.5V ~ 16V | |
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Infineon Technologies
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Synchronous | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 200 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 70ns, 35ns | 8-SOIC | 10V ~ 20V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | 12ns, 13ns | 8-SOIC-EP | 4.5V ~ 20V | |
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Texas Instruments
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Independent | 1A, 1A | Half-Bridge | N-Channel MOSFET | 108 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 15ns, 15ns | 8-SOIC | 8V ~ 14V | |
Texas Instruments
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Independent | 4A, 4A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 1V, 2V | Through Hole | 2 | -40°C ~ 125°C (TA) | 20ns, 15ns | 8-PDIP | 4V ~ 15V | |
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IXYS
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Independent | 2A, 2A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 3V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 7.5ns, 6.5ns | 8-SOIC | 4.5V ~ 35V | |
|
IXYS
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Single | 9A, 9A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 3V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 22ns, 15ns | 8-SOIC-EP | 4.5V ~ 35V | |
|
Infineon Technologies
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Synchronous | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.9V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 150ns, 50ns | 14-SOIC | 10V ~ 20V |
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