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| Part & Mfr | Total Stock | Pricing & RFQ | Channel Type | Current | Driven Configuration | Gate Type | High Side Voltage | Input Type | Logic Voltage | Mounting Type | Number of Drivers | Operating Temperature | Rise | Supplier Device Package | Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies
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- | - | - | - | - | - | - | - | - | - | - | - | - | |
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Infineon Technologies
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Independent | 6A, 6A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 33ns, 33ns (Max) | PG-DSO-8-9 | 5V ~ 20V | |
IXYS
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Single | 15A, 15A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3.5V | Surface Mount | 1 | -40°C ~ 85°C | 4ns, 4ns | 6-SMD | 8V ~ 18V | |
Infineon Technologies
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3-Phase | 200mA, 350mA | Half-Bridge | N-Channel MOSFET | 200 V | Non-Inverting | 0.7V, 2.5V | Surface Mount | 6 | -40°C ~ 125°C (TA) | 100ns, 35ns | 28-SOIC | 24V ~ 150V | |
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On Semiconductor
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Diodes Incorporated
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Synchronous | 1.5A, 2.5A | Half-Bridge | N-Channel MOSFET | 50 V | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 17ns, 12ns | W-DFN3030-10 | 8V ~ 14V | |
Diodes Incorporated
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Independent | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.6V, 2.5V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 100ns, 35ns | 14-SO | 10V ~ 20V | |
On Semiconductor
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Synchronous | 2.5A, 1.6A | High-Side or Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.7V, 3.4V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | 30ns, 27ns | 8-DFN (3x3) | 4.5V ~ 13.2V | |
pSemi
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Synchronous | 2A, 4A | Half-Bridge | N-Channel MOSFET | 100 V | Inverting | 0.6V, 1.6V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 900ps, 900ps | Die | 4V ~ 6V | |
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Diodes Incorporated
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Synchronous | 1.5A, 2A | Half-Bridge | N-Channel MOSFET | 50 V | CMOS/TTL | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 16ns, 12ns | W-DFN3030-10 | 0.3V ~ 60V | |
STMicroelectronics
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Independent | 2A, 2.5A | Half-Bridge | IGBT, N-Channel MOSFET | 500 V | CMOS/TTL | 1.45V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 25ns, 25ns | 14-SO | 10V ~ 20V | |
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STMicroelectronics
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Independent | 2A, 2.5A | Half-Bridge | IGBT, N-Channel MOSFET | 500 V | CMOS/TTL | 1.45V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 25ns, 25ns | 14-SO | 10V ~ 20V | |
Analog Devices Inc./Maxim Integrated
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STMicroelectronics
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Independent | 2A, 2.5A | High-Side or Low-Side | IGBT, N-Channel MOSFET | 500 V | CMOS/TTL | 1.45V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 25ns, 25ns | 14-SO | 10V ~ 20V | |
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STMicroelectronics
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Independent | 2A, 2.5A | High-Side or Low-Side | IGBT, N-Channel MOSFET | 500 V | CMOS/TTL | 1.45V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 25ns, 25ns | 14-SO | 10V ~ 20V | |
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Power Integrations
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- | 48A, 48A | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Through Hole | 1 | -40°C ~ 85°C (TA) | - | Module | 15V | |
Power Integrations
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- | 18A, 18A | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Through Hole | 2 | -40°C ~ 85°C (TA) | - | Module | 15V | |
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Power Integrations
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Single | 12A, 12A | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 1 | -40°C ~ 85°C (TA) | 100ns, 100ns | Module | 15.5V ~ 16.8V | |
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Power Integrations
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Single | 12A, 12A | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 1 | -40°C ~ 85°C (TA) | 100ns, 100ns | Module | 15.5V ~ 16.8V | |
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Power Integrations
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Single | 12A, 12A | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 1 | -40°C ~ 85°C (TA) | 100ns, 100ns | Module | 15.5V ~ 16.8V | |
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Power Integrations
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Single | 12A, 12A | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 1 | -40°C ~ 85°C (TA) | 100ns, 100ns | Module | 15.5V ~ 16.8V | |
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Power Integrations
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Single | 12A, 12A | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 1 | -40°C ~ 85°C (TA) | 100ns, 100ns | Module | 15.5V ~ 16.8V | |
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Power Integrations
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Single | 12A, 12A | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 1 | -40°C ~ 85°C (TA) | 100ns, 100ns | Module | 15.5V ~ 16.8V | |
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Analog Devices Inc./Maxim Integrated
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- | - | - | - | - | - | - | - | - | - | - | - | - | |
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Power Integrations
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Single | 12A, 12A | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 1 | -40°C ~ 85°C (TA) | 100ns, 100ns | Module | 15.5V ~ 16.8V | |
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Power Integrations
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Single | 12A, 12A | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 1 | -40°C ~ 85°C (TA) | 100ns, 100ns | Module | 15.5V ~ 16.8V | |
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Power Integrations
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Power Integrations
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- | - | Half-Bridge | IGBT | - | - | - | Chassis Mount | 6 | -40°C ~ 85°C | 160ns, 130ns | Module | 0V ~ 16V | |
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Power Integrations
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Power Integrations
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- | - | - | IGBT | 800 V | - | - | Chassis Mount | 6 | -40°C ~ 85°C | - | Module | - | |
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Power Integrations
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- | - | - | IGBT | 1200 V | - | - | Chassis Mount | 6 | -40°C ~ 85°C | - | Module | - | |
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Power Integrations
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- | - | - | IGBT | 800 V | - | - | Chassis Mount | - | -40°C ~ 85°C | - | Module | - | |
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Power Integrations
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- | - | - | IGBT | 1200 V | - | - | Chassis Mount | - | -40°C ~ 85°C | - | Module | - | |
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Power Integrations
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- | - | - | IGBT | 800 V | - | - | Chassis Mount | - | -40°C ~ 85°C | - | Module | - | |
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Power Integrations
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- | - | - | IGBT | 1200 V | - | - | Chassis Mount | - | -40°C ~ 85°C | - | Module | - | |
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Power Integrations
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- | - | - | IGBT | 800 V | - | - | Chassis Mount | - | -40°C ~ 85°C | - | Module | - | |
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Power Integrations
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- | - | - | IGBT | 800 V | - | - | Chassis Mount | - | -40°C ~ 85°C | - | Module | - | |
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Power Integrations
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- | - | - | IGBT | 1200 V | - | - | Chassis Mount | - | -40°C ~ 85°C | - | Module | - | |
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Power Integrations
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Single | - | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 1 | -40°C ~ 85°C (TA) | 100ns, 100ns | Module | 14.5V ~ 15.5V | |
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Power Integrations
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Single | - | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 1 | -40°C ~ 85°C (TA) | 100ns, 100ns | Module | 14.5V ~ 15.5V | |
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Power Integrations
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Single | - | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 1 | -40°C ~ 85°C (TA) | 100ns, 100ns | Module | 14.5V ~ 15.5V | |
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Power Integrations
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Single | - | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 1 | -40°C ~ 85°C (TA) | 100ns, 100ns | Module | 14.5V ~ 15.5V | |
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Power Integrations
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Single | - | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 1 | -40°C ~ 85°C (TA) | 100ns, 100ns | Module | 14.5V ~ 15.5V | |
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Power Integrations
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Single | - | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 1 | -40°C ~ 85°C (TA) | 100ns, 100ns | Module | 14.5V ~ 15.5V | |
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Power Integrations
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Single | - | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 1 | -40°C ~ 85°C (TA) | 100ns, 100ns | Module | 14.5V ~ 15.5V | |
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Power Integrations
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Single | - | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 1 | -40°C ~ 85°C (TA) | 100ns, 100ns | Module | 14.5V ~ 15.5V | |
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Power Integrations
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Single | - | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 1 | -40°C ~ 85°C (TA) | 100ns, 100ns | Module | 14.5V ~ 15.5V | |
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Power Integrations
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Single | 18A, 18A | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 1 | -40°C ~ 85°C (TA) | 100ns, 100ns | Module | 14.5V ~ 15.5V | |
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Analog Devices Inc./Maxim Integrated
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- | - | - | - | - | - | - | - | - | - | - | - | - | |
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Power Integrations
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Single | 18A, 18A | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 1 | -40°C ~ 85°C (TA) | 100ns, 100ns | Module | 14.5V ~ 15.5V | |
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Power Integrations
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Single | 18A, 18A | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 1 | -40°C ~ 85°C (TA) | 100ns, 100ns | Module | 14.5V ~ 15.5V | |
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Power Integrations
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Single | 18A, 18A | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 1 | -40°C ~ 85°C (TA) | 100ns, 100ns | Module | 14.5V ~ 15.5V | |
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Power Integrations
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Single | 18A, 18A | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 1 | -40°C ~ 85°C (TA) | 100ns, 100ns | Module | 14.5V ~ 15.5V | |
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Power Integrations
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Single | 18A, 18A | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 1 | -40°C ~ 85°C (TA) | 100ns, 100ns | Module | 14.5V ~ 15.5V | |
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Power Integrations
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- | - | - | - | - | - | - | - | - | - | - | - | - | |
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Power Integrations
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Single | - | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 2 | - | - | Module | 0V ~ 16V | |
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Power Integrations
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Single | - | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 2 | - | - | Module | 0V ~ 16V | |
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Power Integrations
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Single | - | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 2 | - | - | Module | 0V ~ 16V | |
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Power Integrations
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Single | - | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 2 | - | - | Module | 0V ~ 16V | |
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Power Integrations
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Single | - | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 2 | - | - | Module | 0V ~ 16V | |
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Powerex Inc.
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Power Integrations
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Single | - | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 2 | - | - | Module | 0V ~ 16V | |
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Power Integrations
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Single | - | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 2 | - | - | Module | 0V ~ 16V | |
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Power Integrations
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Single | - | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 2 | - | - | Module | 0V ~ 16V | |
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Power Integrations
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Single | - | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 2 | - | - | Module | 0V ~ 16V | |
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Power Integrations
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Single | - | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 2 | - | - | Module | 0V ~ 16V | |
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Power Integrations
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Single | - | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 2 | - | - | Module | 0V ~ 16V | |
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Power Integrations
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Single | - | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 2 | - | - | Module | 0V ~ 16V | |
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Power Integrations
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Single | - | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 2 | - | - | Module | 0V ~ 16V | |
Diodes Incorporated
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Independent | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting, Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 100ns, 35ns | 8-SO | 10V ~ 20V | |
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Diodes Incorporated
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Synchronous | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 70ns, 35ns | 8-SO | 10V ~ 20V | |
Power Integrations
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Single | 8A, 48A | High-Side or Low-Side | IGBT, N-Channel MOSFET | - | Inverting | 0.5V, 3.3V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 465ns, 460ns | eSOP-R16B | 4.75V ~ 5.25V | |
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Power Integrations
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Single | 8A, 48A | High-Side or Low-Side | IGBT, N-Channel MOSFET | - | Inverting | 0.5V, 3.3V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 465ns, 460ns | eSOP-R16B | 4.75V ~ 5.25V | |
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Power Integrations
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- | 18A, 18A | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 2 | -40°C ~ 85°C (TA) | - | Module | 15V | |
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Power Integrations
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- | 18A, 18A | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 2 | -40°C ~ 85°C (TA) | - | Module | 15V | |
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Power Integrations
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Synchronous | - | Low-Side | IGBT, N-Channel MOSFET | - | Inverting | - | Through Hole | 6 | -40°C ~ 85°C (TJ) | 100ns, 80ns | Module | 0V ~ 16V | |
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Power Integrations
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Synchronous | - | Low-Side | IGBT, N-Channel MOSFET | - | Inverting | - | Through Hole | 6 | -40°C ~ 85°C (TJ) | 100ns, 80ns | Module | 0V ~ 16V | |
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Power Integrations
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Single | 16A, 16A | High-Side or Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | - | 0.9V, 3.8V | Through Hole | 1 | -40°C ~ 85°C (TA) | 100ns, 80ns | Module | 14V ~ 16V | |
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Power Integrations
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Independent | - | Half-Bridge | IGBT, N-Channel MOSFET | - | - | - | Through Hole | 2 | -40°C ~ 85°C (TA) | 100ns, 80ns | Module | 14V ~ 16V | |
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Power Integrations
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Independent | - | Half-Bridge | IGBT, N-Channel MOSFET | - | - | - | Through Hole | 2 | -40°C ~ 85°C (TA) | 100ns, 80ns | Module | 14V ~ 16V | |
On Semiconductor
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Single | 4A, 4A | High-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 25ns, 15ns | 8-SOIC | 10V ~ 20V | |
Microchip Technology
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Single | 500mA, 500mA | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 125°C | 19ns, 15ns | SOT-23-5 | 4.5V ~ 18V | |
Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 15ns, 18ns | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 15ns, 18ns | 8-SOIC | 4.5V ~ 18V | |
Microchip Technology
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Single | 6A, 6A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 125°C | 20ns, 20ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 125°C | 20ns, 20ns | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Single | 1.5A, 1.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 125°C (TA) | 18ns, 21ns | SOT-23-5 | 4.5V ~ 18V | |
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Microchip Technology
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Single | 1.5A, 1.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 125°C (TA) | 18ns, 21ns | SOT-23-5 | 4.5V ~ 18V | |
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Microchip Technology
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Single | 1.5A, 1.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 125°C (TA) | 18ns, 21ns | SOT-23-5 | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 4A, 4A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 15ns, 18ns | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Single | 10A, 10A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 125°C (TA) | 38ns, 33ns | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Single | 10A, 10A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 125°C (TA) | 38ns, 33ns | 8-SOIC | 4.5V ~ 18V | |
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Analog Devices Inc./Maxim Integrated
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 12ns, 12ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 25ns, 25ns | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 25ns, 25ns | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 19ns, 19ns | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 15ns, 18ns | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 125°C (TA) | 20ns, 20ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 12ns, 12ns | 8-DFN-S (6x5) | 4.5V ~ 18V |
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