What are Discrete Semiconductor Products ?
Discrete Semiconductor Products are electronic components that manage and control electrical signals, including devices like transistors and diodes. They are widely used in applications such as new product design, production electronics assembly, and maintenance. Important specifications for selection include mounting or package types, lifecycle status, and electrical compatibility, as these factors ensure proper integration into existing systems. Validating lifecycle status and confirming compatibility with design constraints are crucial for procurement teams.
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| Part & Mfr | Total Stock | Pricing & RFQ | |
|---|---|---|---|
STMicroelectronics
<p>The BAT54SFILM from STMicroelectronics is a Schottky diode array with a 1 pair series connection configuration, designed for surface mount applications. It is housed in a compact SOT-23-3 package, which also corresponds to TO-236-3 and SC-59. Key electrical specifications include a maximum reverse voltage of 40V, an average rectified current of 200mA per diode, and a forward voltage of 900mV at 100mA. The device offers fast switching with a reverse recovery time of 5ns, suitable for high-frequency rectification. The operating junction temperature range is -40°C to 150°C. The reverse leakage current is specified as 1A at 30V. This diode array is suitable for a variety of circuits requiring compact, dual Schottky diodes in series.</p>
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40,175,130
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Price on request
40,175,130
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NXP Semiconductors
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25,573,020
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Price on request
25,573,020
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Nexperia USA Inc.
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18,552,010
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Price on request
18,552,010
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Nexperia USA Inc.
<p>The BAT54C,215 is a planar Schottky barrier diode array from Nexperia, featuring an integrated guard ring for stress protection. It contains two Schottky diodes in a common cathode configuration, encapsulated in a small SOT23 (TO-236AB) surface-mount plastic package.</p><p> </p><p>Key electrical specifications include a maximum reverse voltage of 30V, maximum forward current of 200mA (per diode), and low forward voltage drops: 240mV at 0.1mA, 320mV at 1mA, 400mV at 10mA, and 800mV at 100mA. Reverse current is limited to 2µA at VR=25V. The device offers ultra high-speed switching with a typical reverse recovery time of 5ns.</p><p> </p><p>Designed for applications such as ultra high-speed switching, line termination, voltage clamping, and reverse polarity protection, the BAT54C,215 operates over an ambient temperature range of -55°C to 150°C. Maximum power dissipation is 250mW at 25°C ambient when mounted on a standard FR4 PCB.</p>
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17,754,459
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Price on request
17,754,459
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Nexperia USA Inc.
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17,600,365
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Price on request
17,600,365
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Nexperia USA Inc.
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16,159,595
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Price on request
16,159,595
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Diodes Incorporated
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15,393,650
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Price on request
15,393,650
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On Semiconductor
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14,318,999
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Price on request
14,318,999
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NXP Semiconductors
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14,276,980
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Price on request
14,276,980
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Diodes Incorporated
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14,091,020
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Price on request
14,091,020
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On Semiconductor
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14,006,900
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Price on request
14,006,900
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Nexperia USA Inc.
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13,847,332
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Price on request
13,847,332
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Nexperia USA Inc.
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13,397,516
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Price on request
13,397,516
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Nexperia USA Inc.
<p>The BAW56,215 is a high-speed switching diode array from Nexperia USA Inc., featuring two diodes with a common anode configuration. It is designed for high-speed and general-purpose switching applications, offering a reverse voltage rating of 90V and a forward current of 215mA per diode.</p><p> </p><p>Key electrical characteristics include a maximum reverse recovery time of 4ns, ensuring fast switching performance, and a low forward voltage of 715mV at 1mA, 855mV at 10mA, 1V at 50mA, and 1.25V at 150mA. The device also features a low reverse current of 0.5µA at 80V and a total power dissipation of 250mW.</p><p> </p><p>The BAW56,215 is housed in a small SOT23 (TO-236AB) surface-mount plastic package, making it suitable for compact PCB designs. It operates over a junction temperature range of -65°C to 150°C and has a storage temperature range of -65°C to 150°C.</p>
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12,980,265
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Price on request
12,980,265
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On Semiconductor
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11,856,991
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Price on request
11,856,991
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Nexperia USA Inc.
<p>The BAV70,215 is a high-speed switching diode array from Nexperia, featuring two diodes in a common cathode configuration. It is designed for general-purpose switching and high-speed switching applications. The device is rated for a maximum reverse voltage of 100V and an average rectified current of 215mA per diode. It offers a low forward voltage of 1.25V at 150mA and a fast reverse recovery time of 4ns. The diode capacitance is 1.5pF typical. The device is housed in a small SOT-23-3 (TO-236AB) surface-mount package, making it suitable for compact designs. It is qualified to AEC-Q101 for automotive applications. The operating temperature range extends to 150°C. The BAV70,215 is listed as RoHS3 compliant and REACH unaffected.</p>
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11,356,755
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Price on request
11,356,755
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On Semiconductor
<p>The BAT54SLT1G is a dual series Schottky barrier diode from onsemi designed for high-speed switching applications, circuit protection, and voltage clamping. It features an extremely low forward voltage of 0.35V typical at 10mA, which reduces conduction loss. The device is configured as a 1 pair series connection and is housed in a miniature SOT-23-3 surface mount package.</p><p> </p><p>Key electrical specifications include a maximum reverse voltage of 30V, a maximum forward current of 200mA DC, and a maximum reverse recovery time of 5ns. The diode can handle non-repetitive peak forward currents up to 600mA for pulses less than 10ms and up to 1.0A for a 1-second square pulse. The junction temperature range is -55 to 150°C.</p><p> </p><p>The BAT54SLT1G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. It is supplied in tape and reel packaging with a standard quantity of 3000 pieces per reel, making it suitable for automated assembly processes. The S prefix variant is AEC-Q101 qualified and PPAP capable for automotive applications.</p>
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11,305,664
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Price on request
11,305,664
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On Semiconductor
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10,989,191
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Price on request
10,989,191
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Nexperia USA Inc.
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10,749,100
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Price on request
10,749,100
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Nexperia USA Inc.
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9,178,821
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Price on request
9,178,821
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Nexperia USA Inc.
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8,982,447
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Price on request
8,982,447
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Toshiba
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8,609,524
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Price on request
8,609,524
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On Semiconductor
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8,390,000
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Price on request
8,390,000
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Toshiba
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8,218,182
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Price on request
8,218,182
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On Semiconductor
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8,033,726
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Price on request
8,033,726
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Nexperia USA Inc.
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7,995,790
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Price on request
7,995,790
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Toshiba
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7,860,870
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Price on request
7,860,870
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On Semiconductor
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7,811,040
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Price on request
7,811,040
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Nexperia USA Inc.
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7,522,020
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Price on request
7,522,020
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On Semiconductor
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7,237,020
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Price on request
7,237,020
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Nexperia USA Inc.
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6,641,750
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Price on request
6,641,750
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On Semiconductor
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6,532,102
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Price on request
6,532,102
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Vishay Dale
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6,457,143
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Price on request
6,457,143
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On Semiconductor
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6,231,150
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Price on request
6,231,150
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Toshiba
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6,026,667
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Price on request
6,026,667
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Nexperia USA Inc.
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5,851,020
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Price on request
5,851,020
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Diodes Incorporated
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5,662,780
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Price on request
5,662,780
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NXP Semiconductors
<p>The BZX84-C5V1/215 is a low-power voltage regulator diode from the BZX84 series, manufactured by NXP Semiconductors (originally designed by Nexperia). It features a nominal Zener voltage of 5.1V with approximately ±5% tolerance. The diode can dissipate up to 250mW of power at ambient temperatures up to 25°C and withstand non-repetitive peak reverse power up to 40W. The forward voltage is 0.9V maximum at 10mA.</p><p> </p><p>This device is housed in a surface-mount SOT23 (TO-236AB) package with 3 leads, suitable for automated assembly. It is designed for general regulation functions in compact electronic circuits such as voltage regulation, clipping, and reference circuits.</p>
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5,647,670
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Price on request
5,647,670
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Nexperia USA Inc.
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5,294,020
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Price on request
5,294,020
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On Semiconductor
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5,265,779
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Price on request
5,265,779
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Nexperia USA Inc.
<p>The BAV99S,115 is a high-speed switching diode array from Nexperia, featuring two pairs of series-connected standard diodes. Designed for general-purpose switching and reverse polarity protection, it offers a reverse voltage of 100V and a forward current of 200mA per diode.</p><p> </p><p>With a reverse recovery time (trr) of 4 ns and low diode capacitance of 1.5 pF, this device is suitable for high-speed switching applications. The forward voltage is 1.25V maximum at 150mA, and the reverse current is 500nA maximum at 80V.</p><p> </p><p>The part is housed in a surface-mount SOT-363 (6-TSSOP, SC-88) package and operates at a maximum junction temperature of 150°C. It is qualified to AEC-Q101 automotive standard.</p>
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5,254,172
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Price on request
5,254,172
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On Semiconductor
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5,200,351
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Price on request
5,200,351
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Nexperia USA Inc.
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5,167,269
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Price on request
5,167,269
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On Semiconductor
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5,060,315
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Price on request
5,060,315
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Nexperia USA Inc.
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5,026,070
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Price on request
5,026,070
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On Semiconductor
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4,965,000
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Price on request
4,965,000
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Nexperia USA Inc.
<p>The BAV170 is a low-leakage double diode array in a small SOT23 plastic SMD package. The diodes are in common cathode configuration, making it suitable for low-leakage current applications in surface mounted circuits.</p><p> </p><p>Key electrical specifications include a maximum reverse voltage of 75V, repetitive peak reverse voltage of 85V, and forward current of 215mA when a single diode is loaded (125mA when both diodes are loaded). The device has a typical reverse leakage current of only 3 pA at 75V, and a maximum reverse recovery time of 3 µs. Total power dissipation is 250mW at ambient temperatures up to 25°C.</p><p> </p><p>The BAV170 is designed for low-leakage applications such as signal switching and protection circuits. It is housed in a SOT23 package with body dimensions 2.9mm x 1.3mm x 1mm and a 1.9mm pitch, suitable for surface mount assembly. The operating junction temperature range is -65°C to 150°C.</p>
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4,963,527
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Price on request
4,963,527
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Nexperia USA Inc.
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4,948,020
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Price on request
4,948,020
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On Semiconductor
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4,892,890
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Price on request
4,892,890
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Diodes Incorporated
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4,862,757
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Price on request
4,862,757
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