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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
JANSP2N3499
JANSP2N3499
Microchip Technology
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 500 mA 100 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) NPN 600mV @ 30mA, 300mA 100 V
JANSD2N3499L
JANSD2N3499L
Microchip Technology
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 500 mA 100 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5AA NPN 600mV @ 30mA, 300mA 100 V
JANSD2N3498L
JANSD2N3498L
Microchip Technology
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 500 mA 40 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5AA NPN 600mV @ 30mA, 300mA 100 V
JANSP2N3498L
JANSP2N3498L
Microchip Technology
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 500 mA 40 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5AA NPN 600mV @ 30mA, 300mA 100 V
JANSR2N3500
JANSR2N3500
Microchip Technology
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 300 mA 40 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) NPN 400mV @ 15mA, 150mA 150 V
JANSL2N3499L
JANSL2N3499L
Microchip Technology
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 500 mA 100 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5AA NPN 600mV @ 30mA, 300mA 100 V
JANSD2N3498
JANSD2N3498
Microchip Technology
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 500 mA 40 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) NPN 600mV @ 30mA, 300mA 100 V
JANSD2N3500
JANSD2N3500
Microchip Technology
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 300 mA 40 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) NPN 400mV @ 15mA, 150mA 150 V
JANSL2N3501L
JANSL2N3501L
Microchip Technology
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 300 mA 100 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5AA NPN 400mV @ 15mA, 150mA 150 V
JANSL2N3500L
JANSL2N3500L
Microchip Technology
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 300 mA 40 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5AA NPN 400mV @ 15mA, 150mA 150 V
JANSL2N3500
JANSL2N3500
Microchip Technology
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 300 mA 40 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) NPN 400mV @ 15mA, 150mA 150 V
JANSL2N3498L
JANSL2N3498L
Microchip Technology
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 500 mA 40 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5AA NPN 600mV @ 30mA, 300mA 100 V
JANSP2N3500
JANSP2N3500
Microchip Technology
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 300 mA 40 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) NPN 400mV @ 15mA, 150mA 150 V
JANSM2N3500
JANSM2N3500
Microchip Technology
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 300 mA 40 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) NPN 400mV @ 15mA, 150mA 150 V
JANSM2N3498
JANSM2N3498
Microchip Technology
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 500 mA 40 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) NPN 600mV @ 30mA, 300mA 100 V
JANSP2N3501
JANSP2N3501
Microchip Technology
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 300 mA 100 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) NPN 400mV @ 15mA, 150mA 150 V
JANSP2N3501L
JANSP2N3501L
Microchip Technology
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 300 mA 100 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5AA NPN 400mV @ 15mA, 150mA 150 V
JANSD2N3501L
JANSD2N3501L
Microchip Technology
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 300 mA 100 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5AA NPN 400mV @ 15mA, 150mA 150 V
2SC3787S
2SC3787S
On Semiconductor
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JANSM2N3501L
JANSM2N3501L
Microchip Technology
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 300 mA 100 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5AA NPN 400mV @ 15mA, 150mA 150 V
JANSM2N3500L
JANSM2N3500L
Microchip Technology
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 300 mA 40 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5AA NPN 400mV @ 15mA, 150mA 150 V
JANSM2N3499
JANSM2N3499
Microchip Technology
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 500 mA 100 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) NPN 600mV @ 30mA, 300mA 100 V
JANSM2N3499L
JANSM2N3499L
Microchip Technology
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 500 mA 100 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5AA NPN 600mV @ 30mA, 300mA 100 V
JANSM2N3498L
JANSM2N3498L
Microchip Technology
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 500 mA 40 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5AA NPN 600mV @ 30mA, 300mA 100 V
JANSL2N3498
JANSL2N3498
Microchip Technology
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 500 mA 40 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) NPN 600mV @ 30mA, 300mA 100 V
JANSD2N3499
JANSD2N3499
Microchip Technology
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 500 mA 100 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) NPN 600mV @ 30mA, 300mA 100 V
JANSM2N3501
JANSM2N3501
Microchip Technology
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 300 mA 100 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) NPN 400mV @ 15mA, 150mA 150 V
JANTXV2N6301
JANTXV2N6301
Microchip Technology
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 8 A 750 @ 4A, 3V - Through Hole -55°C ~ 200°C (TJ) 75 W TO-66 PNP - Darlington 3V @ 80mA, 8A 80 V
JANTXV2N6298
JANTXV2N6298
Microchip Technology
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 8 A 750 @ 4A, 3V - Through Hole -65°C ~ 175°C (TJ) 64 W TO-66 (TO-213AA) PNP - Darlington 2V @ 80mA, 8A 60 V
JANTXV2N6300
JANTXV2N6300
Microchip Technology
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 8 A 750 @ 4A, 3V - Through Hole -55°C ~ 200°C (TJ) 75 W TO-66 (TO-213AA) NPN - Darlington 3V @ 80mA, 8A 60 V
JANTXV2N2369AUA
JANTXV2N2369AUA
Microchip Technology
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 400nA 20 @ 100mA, 1V - Surface Mount -65°C ~ 200°C (TJ) 360 mW UA NPN 450mV @ 10mA, 100mA 15 V
2N5871
2N5871
Microchip Technology
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JANTXV2N6299
JANTXV2N6299
Microchip Technology
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 500 µA 500 @ 1A, 3V - Through Hole -65°C ~ 200°C (TJ) 64 W TO-66 (TO-213AA) PNP - Darlington 2V @ 80mA, 8A 80 V
MVR2N2222AUBC/TR
MVR2N2222AUBC/TR
Microchip Technology
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 800 mA 100 @ 150mA, 10V - Surface Mount -65°C ~ 200°C (TJ) 500 mW UBC NPN 1V @ 50mA, 500mA 50 V
2C3716-MSCL
2C3716-MSCL
Microchip Technology
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 - - - - - - - - - -
JANTX2N4234
JANTX2N4234
Microchip Technology
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 1 A 30 @ 250mA, 1V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) PNP 600mV @ 100mA, 1A 40 V
JANTX2N4235
JANTX2N4235
Microchip Technology
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 1 A 30 @ 250mA, 1V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) PNP 600mV @ 100mA, 1A 60 V
JANTX2N4237
JANTX2N4237
Microchip Technology
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 1 A 30 @ 250mA, 1V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) NPN 600mV @ 100mA, 1A 40 V
JANTX2N4238
JANTX2N4238
Microchip Technology
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 1 A 30 @ 250mA, 1V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) NPN 600mV @ 100mA, 1A 60 V
JANTX2N4239
JANTX2N4239
Microchip Technology
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 1 A 30 @ 250mA, 1V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) NPN 600mV @ 100mA, 1A 80 V
JANTX2N4236
JANTX2N4236
Microchip Technology
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 1 A 40 @ 100mA, 1V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 PNP 600mV @ 100mA, 1A 80 V
JANTX2N4235L
JANTX2N4235L
Microchip Technology
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 1 A 40 @ 100mA, 1V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) PNP 600mV @ 100mA, 1A 60 V
JANTX2N4234L
JANTX2N4234L
Microchip Technology
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 1 A 40 @ 100mA, 1V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) PNP 600mV @ 100mA, 1A 40 V
JANTX2N4236L
JANTX2N4236L
Microchip Technology
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 1 A 40 @ 100mA, 1V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) PNP 600mV @ 100mA, 1A 80 V
JANTX2N6301P
JANTX2N6301P
Microchip Technology
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 8 A 750 @ 4A, 3V - Through Hole -55°C ~ 200°C (TJ) 75 W TO-66 (TO-213AA) NPN - Darlington 3V @ 80mA, 8A 80 V
2N4399
2N4399
Microchip Technology
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 30 A 15 @ 15A, 2V - Through Hole -55°C ~ 200°C (TJ) 5 W TO-204AD (TO-3) PNP 750mV @ 1A, 10A 60 V
2N3792
2N3792
Microchip Technology
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 10 A 50 @ 1A, 2V - Through Hole -65°C ~ 200°C (TJ) 5 W TO-3 PNP 2.5V @ 2A, 10A 80 V
2N5878
2N5878
Microchip Technology
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JAN2N3902
JAN2N3902
Microchip Technology
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 3.5 A 30 @ 1A, 5V - Through Hole -65°C ~ 200°C (TJ) 5 W TO-204AA (TO-3) NPN 2.5V @ 700mA, 3.5A 400 V
2N6233
2N6233
Microchip Technology
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 5 A 25 @ 1A, 5V - Through Hole - 50 W TO-66 NPN 2.5V @ 1A, 5A 225 V
Showing 14651-14700 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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