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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
JANSH2N2219AL
JANSH2N2219AL
Microchip Technology
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Through Hole -55°C ~ 200°C (TJ) 800 mW - - TO-5AA - NPN 1V @ 50mA, 500mA 50 V
JANSH2N2219A
JANSH2N2219A
Microchip Technology
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Through Hole -55°C ~ 200°C 800 mW - - TO-39 (TO-205AD) - NPN 1V @ 50mA, 500mA 50 V
2N3439U4
2N3439U4
Microchip Technology
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 - - - - - - - - 1 A 40 @ 20mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 800 mW - - U4 - NPN 500mV @ 4mA, 50mA 350 V
JANS2N2369AUBC/TR
JANS2N2369AUBC/TR
Microchip Technology
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 - - - - - - - - 400nA 20 @ 100mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 360 mW - - UBC - NPN 450mV @ 10mA, 100mA 15 V
JANSL2N2369AUBC
JANSL2N2369AUBC
Microchip Technology
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 - - - - - - - - 400nA 20 @ 100mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 360 mW - - UBC - NPN 450mV @ 10mA, 100mA 15 V
JANSP2N2369AUBC
JANSP2N2369AUBC
Microchip Technology
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 - - - - - - - - 400nA 20 @ 100mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 360 mW - - UBC - NPN 450mV @ 10mA, 100mA 15 V
JANSL2N2369AUB
JANSL2N2369AUB
Microchip Technology
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 - - - - - - - - 400nA 40 @ 10mA, 1V - - - - - - Surface Mount -65°C ~ 200°C 400 mW - - UB - NPN 450mV @ 10mA, 100mA 20 V
JANSM2N2369AUBC
JANSM2N2369AUBC
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 - - - - - - - - 400nA 20 @ 100mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 360 mW - - UBC - NPN 450mV @ 10mA, 100mA 15 V
JANSD2N2369AUBC
JANSD2N2369AUBC
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 - - - - - - - - 400nA 20 @ 100mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 360 mW - - UBC - NPN 450mV @ 10mA, 100mA 15 V
JANSD2N2369AUBC/TR
JANSD2N2369AUBC/TR
Microchip Technology
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 - - - - - - - - 400nA 20 @ 100mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 360 mW - - UBC - NPN 450mV @ 10mA, 100mA 15 V
JANSL2N2369AUBC/TR
JANSL2N2369AUBC/TR
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 - - - - - - - - 400nA 20 @ 100mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 360 mW - - UBC - NPN 450mV @ 10mA, 100mA 15 V
JANSP2N2369AUBC/TR
JANSP2N2369AUBC/TR
Microchip Technology
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 - - - - - - - - 400nA 20 @ 100mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 360 mW - - UBC - NPN 450mV @ 10mA, 100mA 15 V
JANSF2N2369AUBC/TR
JANSF2N2369AUBC/TR
Microchip Technology
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 - - - - - - - - 400nA 20 @ 100mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 360 mW - - UBC - NPN 450mV @ 10mA, 100mA 15 V
JANSM2N2369AUBC/TR
JANSM2N2369AUBC/TR
Microchip Technology
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 - - - - - - - - 400nA 20 @ 100mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 360 mW - - UBC - NPN 450mV @ 10mA, 100mA 15 V
JANTXV2N5663U3
JANTXV2N5663U3
Microchip Technology
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 - - - - - - - - 2 A - - - - - - - Surface Mount -65°C ~ 200°C (TJ) - - - U3 (SMD-0.5) - NPN - 300 V
2N3439U4/TR
2N3439U4/TR
Microchip Technology
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 - - - - - - - - 1 A 40 @ 20mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 800 mW - - U4 - NPN 500mV @ 4mA, 50mA 350 V
JANS2N5667S
JANS2N5667S
Microchip Technology
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 - - - - - - - - 5 A 25 @ 1A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1.2 W - - TO-39 (TO-205AD) - NPN 1V @ 1A, 5A 300 V
2N3851
2N3851
Microchip Technology
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 - - - - - - - - 5 A - - - - - - - Stud Mount - 30 W - - TO-59 - PNP - 80 V
2N5411
2N5411
Microchip Technology
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 - - - - - - - - 5 A - - - - - - - Stud Mount -65°C ~ 200°C (TJ) 52 W - - TO-111 - PNP 600mV @ 200µA, 2mA 100 V
2N5077
2N5077
Microchip Technology
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 - - - - - - - - 3 A - - - - - - - Stud Mount - 40 W - - TO-59 - NPN - 250 V
2N5085
2N5085
Microchip Technology
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 - - - - - - - - 10 A - - - - - - - Stud Mount -65°C ~ 200°C (TJ) 20 W - - TO-59 - PNP - 80 V
2N5084
2N5084
Microchip Technology
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 - - - - - - - - 10 A - - - - - - - Stud Mount -65°C ~ 200°C (TJ) 20 W - - TO-59 - PNP - 60 V
2N5410
2N5410
Microchip Technology
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 - - - - - - - - 5 A - - - - - - - Stud Mount -65°C ~ 200°C (TJ) 52 W - - TO-111 - PNP 600mV @ 200µA, 2mA 80 V
2N5083
2N5083
Microchip Technology
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 - - - - - - - - 10 A - - - - - - - Stud Mount -65°C ~ 200°C (TJ) 20 W - - TO-59 - PNP - 60 V
2N5320
2N5320
Microchip Technology
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 - - - - - - - - 2 A 30 @ 500mA, 4V - - - - - - Through Hole -65°C ~ 200°C (TJ) 10 W - - TO-5AA - NPN - 75 V
2N5409
2N5409
Microchip Technology
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 - - - - - - - - 5 A - - - - - - - Stud Mount - 52 W - - TO-111 - PNP - 100 V
2N6187
2N6187
Microchip Technology
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 - - - - - - - - 10 A - - - - - - - Stud Mount - 60 W - - TO-59 - PNP - 80 V
JANS2N5151U3
JANS2N5151U3
Microchip Technology
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 - - - - - - - - 2 A 30 @ 2.5A, 5V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1.16 W - - U3 - PNP 1.5V @ 500mA, 5A 80 V
JANS2N5152U3
JANS2N5152U3
Microchip Technology
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 - - - - - - - - 2 A 30 @ 2.5A, 5V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U3 (SMD-0.5) - NPN 1.5V @ 500mA, 5A 80 V
JANSR2N3440
JANSR2N3440
Microchip Technology
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 - - - - - - - - 1 A 40 @ 20mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) - - - TO-39 (TO-205AD) - NPN 500mV @ 4mA, 50mA 250 V
JANSD2N3439L
JANSD2N3439L
Microchip Technology
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 - - - - - - - - 1 A 40 @ 20mA, 10V - - - - - - Through Hole -55°C ~ 200°C 800 mW - - TO-5AA - NPN 500mV @ 4mA, 50mA 350 V
EMB1
EMB1
Yangzhou Yangjie Electronic Technology Co.,Ltd
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JANSD2N3439
JANSD2N3439
Microchip Technology
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 - - - - - - - - 1 A 40 @ 20mA, 10V - - - - - - Through Hole -55°C ~ 200°C 800 mW - - TO-39 (TO-205AD) - NPN 500mV @ 4mA, 50mA 350 V
JANSP2N3439L
JANSP2N3439L
Microchip Technology
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 - - - - - - - - 1 A 40 @ 20mA, 10V - - - - - - Through Hole -55°C ~ 200°C 800 mW - - TO-5AA - NPN 500mV @ 4mA, 50mA 350 V
JANSL2N3439
JANSL2N3439
Microchip Technology
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 - - - - - - - - 1 A 40 @ 20mA, 10V - - - - - - Through Hole -55°C ~ 200°C 800 mW - - TO-39 (TO-205AD) - NPN 500mV @ 4mA, 50mA 350 V
JANSL2N3439L
JANSL2N3439L
Microchip Technology
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 - - - - - - - - 1 A 40 @ 20mA, 10V - - - - - - Through Hole -55°C ~ 200°C 800 mW - - TO-5AA - NPN 500mV @ 4mA, 50mA 350 V
JANSP2N3439
JANSP2N3439
Microchip Technology
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 - - - - - - - - 1 A 40 @ 20mA, 10V - - - - - - Through Hole -55°C ~ 200°C 800 mW - - TO-39 (TO-205AD) - NPN 500mV @ 4mA, 50mA 350 V
JANSM2N3439L
JANSM2N3439L
Microchip Technology
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 - - - - - - - - 1 A 40 @ 20mA, 10V - - - - - - Through Hole -55°C ~ 200°C 800 mW - - TO-5AA - NPN 500mV @ 4mA, 50mA 350 V
JANSM2N3439
JANSM2N3439
Microchip Technology
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 - - - - - - - - 1 A 40 @ 20mA, 10V - - - - - - Through Hole -55°C ~ 200°C 800 mW - - TO-39 (TO-205AD) - NPN 500mV @ 4mA, 50mA 350 V
JANKCC2N6193
JANKCC2N6193
Microchip Technology
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 - - - - - - - - 5 A 60 @ 2A, 2V - - - - - - Through Hole -65°C ~ 200°C 1 W - - TO-205AD (TO-39) - PNP 1.2V @ 500mA, 5A 100 V
JANSR2N3439L
JANSR2N3439L
Microchip Technology
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 - - - - - - - - 2 µA 40 @ 20mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 800 mW - - TO-5 - NPN 500mV @ 4mA, 50mA 350 V
JANSH2N2221AUBC/TR
JANSH2N2221AUBC/TR
Microchip Technology
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UBC - NPN 1V @ 50mA, 500mA 50 V
JANSG2N2221AUBC
JANSG2N2221AUBC
Microchip Technology
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UBC - NPN 1V @ 50mA, 500mA 50 V
2N5289
2N5289
Microchip Technology
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 - - - - - - - - 10 A - - - - - - - Stud Mount - 116 W - - TO-61 - PNP - 100 V
JANSH2N2218A
JANSH2N2218A
Microchip Technology
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 - - - - - - - - 800 mA 40 @ 150mA, 10V - - - - - - Through Hole -55°C ~ 200°C (TJ) 800 mW - - TO-39 (TO-205AD) - NPN 1V @ 50mA, 500mA 50 V
JANSR2N3440L
JANSR2N3440L
Microchip Technology
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 - - - - - - - - 1 A 40 @ 20mA, 10V - - - - - - Through Hole -55°C ~ 200°C 800 mW - - TO-5AA - NPN 500mV @ 4mA, 50mA 250 V
2N6323
2N6323
Microchip Technology
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 - - - - - - - - 30 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 350 W - - TO-204AD (TO-3) - PNP - 300 V
2N6322
2N6322
Microchip Technology
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 - - - - - - - - 30 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 350 W - - TO-204AD (TO-3) - NPN - 200 V
JANTXV2N3771
JANTXV2N3771
Microchip Technology
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 - - - - - - - - 5 mA 15 @ 15A, 4V - - - - - - Through Hole -65°C ~ 200°C (TJ) 6 W - - TO-3 - NPN 4V @ 6A, 30A 40 V
JANSR2N2369AUBC
JANSR2N2369AUBC
Microchip Technology
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 - - - - - - - - 400 nA 20 @ 100mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 360 mW - - 3-SMD - NPN 450mV @ 10mA, 100mA 15 V
Showing 12201-12250 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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