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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
BCP53HX
BCP53HX
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Nexperia USA Inc.
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 100MHz - - Surface Mount 175°C (TJ) 2.2 W - - SOT-223 - PNP 500mV @ 50mA, 500mA 80 V
BCP53-10HX
BCP53-10HX
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Nexperia USA Inc.
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 100MHz - - Surface Mount 175°C (TJ) 2.2 W - - SOT-223 - PNP 500mV @ 50mA, 500mA 80 V
PBSS9110D,115
PBSS9110D,115
Download Datasheet for PBSS9110D,115
Nexperia USA Inc.
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 - - - - - - - - 1 A 150 @ 500mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 700 mW - - 6-TSOP - PNP 320mV @ 100mA, 1A 100 V
BFS19,235
BFS19,235
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Nexperia USA Inc.
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 - - - - - - - - 30 mA 65 @ 1mA, 10V - - - 260MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN - 20 V
BCP69-16F
BCP69-16F
Nexperia USA Inc.
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 - - - - - - - - 2 A 100 @ 500mA, 1V - - - 140MHz - - Surface Mount 150°C (TJ) 650 mW - - SOT-223 - PNP 600mV @ 200mA, 2A 20 V
BC848BWT106
BC848BWT106
ROHM Semiconductor
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - NPN 600mV @ 5mA, 100mA 30 V
PBSS5520X,135
PBSS5520X,135
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Nexperia USA Inc.
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 - - - - - - - - 5 A 250 @ 2A, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 1.6 W - - SOT-89 - PNP 270mV @ 500mA, 5A 20 V
2SA2030T2L
2SA2030T2L
ROHM Semiconductor
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 - - - - - - - - 500 mA 270 @ 10mA, 2V - - - 260MHz - - Surface Mount 150°C (TJ) 150 mW - - VMT3 - PNP 250mV @ 10mA, 200mA 12 V
ZUMT720TA
ZUMT720TA
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Diodes Incorporated
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 - - - - - - - - 750 mA 90 @ 500mA, 2V - - - 220MHz - - Surface Mount -55°C ~ 150°C (TJ) 500 mW - - SOT-323 - PNP 250mV @ 100mA, 750mA 40 V
2SB1732TL
2SB1732TL
ROHM Semiconductor
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 - - - - - - - - 1.5 A 270 @ 200mA, 2V - - - 400MHz - - Surface Mount 150°C (TJ) 400 mW - - TUMT3 - PNP 200mV @ 25mA, 500mA 12 V
2SD2702TL
2SD2702TL
ROHM Semiconductor
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 - - - - - - - - 1.5 A 270 @ 200mA, 2V - - - 400MHz - - Surface Mount 150°C (TJ) 800 mW - - TUMT3 - NPN 200mV @ 25mA, 500mA 12 V
2N3906,116
2N3906,116
NXP Semiconductors
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 200mV @ 5mA, 50mA 40 V
2SB1731TL
2SB1731TL
ROHM Semiconductor
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 - - - - - - - - 1.5 A 270 @ 100mA, 2V - - - 280MHz - - Surface Mount 150°C (TJ) 400 mW - - TUMT3 - PNP 370mV @ 50mA, 1A 30 V
PBSS4420D,115
PBSS4420D,115
Download Datasheet for PBSS4420D,115
Nexperia USA Inc.
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 - - - - - - - - 4 A 250 @ 2A, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 1.1 W - - 6-TSOP - NPN 1.1V @ 400mA, 4A 20 V
ZXTN25020BFHTA
ZXTN25020BFHTA
Download Datasheet for ZXTN25020BFHTA
Diodes Incorporated
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 - - - - - - - - 4.5 A 100 @ 10mA, 2V - - - 185MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.25 W - - SOT-23-3 - NPN 145mV @ 450mA, 4.5A 20 V
2SCR554RTL
2SCR554RTL
ROHM Semiconductor
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 - - - - - - - - 1.5 A 120 @ 100mA, 3V - - - 300MHz - - Surface Mount 150°C (TJ) 1 W - - TSMT3 - NPN 300mV @ 25mA, 500mA 80 V
BSP43,115
BSP43,115
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Nexperia USA Inc.
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 1.3 W - - SOT-223 - NPN 500mV @ 50mA, 500mA 80 V
BST39,115
BST39,115
Nexperia USA Inc.
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 - - - - - - - - 100 mA 40 @ 20mA, 10V - - - 70MHz - - Surface Mount 150°C (TJ) 1.3 W - - SOT-89 - NPN 500mV @ 4mA, 50mA 350 V
BSR33,135
BSR33,135
Nexperia USA Inc.
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 1.35 W - - SOT-89 - PNP 500mV @ 50mA, 500mA 80 V
BSR33,115
BSR33,115
Nexperia USA Inc.
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 1.35 W - - SOT-89 - PNP 500mV @ 50mA, 500mA 80 V
2SAR554RTL
2SAR554RTL
ROHM Semiconductor
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 - - - - - - - - 1.5 A 120 @ 100mA, 3V - - - 340MHz - - Surface Mount 150°C (TJ) 1 W - - TSMT3 - PNP 400mV @ 25mA, 500mA 80 V
PBSS301PZ,135
PBSS301PZ,135
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Nexperia USA Inc.
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 - - - - - - - - 5.7 A 200 @ 2A, 2V - - - 140MHz - - Surface Mount 150°C (TJ) 2 W - - SOT-223 - PNP 245mV @ 285mA, 5.7A 12 V
PBSS306NX,115
PBSS306NX,115
Download Datasheet for PBSS306NX,115
Nexperia USA Inc.
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 - - - - - - - - 4.5 A 100 @ 2A, 2V - - - 110MHz - - Surface Mount 150°C (TJ) 2.1 W - - SOT-89 - NPN 245mV @ 225mA, 4.5A 100 V
2SB1697T100
2SB1697T100
ROHM Semiconductor
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 - - - - - - - - 2 A 270 @ 200mA, 2V - - - 360MHz - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - PNP 180mV @ 50mA, 1A 12 V
2SCR346PT100P
2SCR346PT100P
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ROHM Semiconductor
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 - - - - - - - - 100 mA 82 @ 10mA, 10V - - - - - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - NPN 300mV @ 2mA, 20mA 400 V
2SA1257-5-TB-E
2SA1257-5-TB-E
On Semiconductor
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PBSS4032PZ,115
PBSS4032PZ,115
Download Datasheet for PBSS4032PZ,115
Nexperia USA Inc.
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 - - - - - - - - 4.4 A 150 @ 2A, 2V - - - 130MHz - - Surface Mount 150°C (TJ) 2 W - - SOT-223 - PNP 400mV @ 200mA, 4A 30 V
2SB1707TL
2SB1707TL
ROHM Semiconductor
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 - - - - - - - - 4 A 270 @ 200mA, 2V - - - 250MHz - - Surface Mount 150°C (TJ) 500 mW - - TSMT3 - PNP 250mV @ 40mA, 2A 12 V
ZX5T955ZTA
ZX5T955ZTA
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Diodes Incorporated
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 - - - - - - - - 3 A 100 @ 1A, 5V - - - 120MHz - - Surface Mount -55°C ~ 150°C (TJ) 2.1 W - - SOT-89-3 - PNP 330mV @ 300mA, 3A 140 V
2N3711 PBFREE
2N3711 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 100nA (ICBO) 180 @ 1mA, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) - - - TO-92-3 - NPN - 30 V
ZTX560
ZTX560
Download Datasheet for ZTX560
Diodes Incorporated
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 - - - - - - - - 150 mA 80 @ 50mA, 10V - - - 60MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - E-Line (TO-92 compatible) - PNP 500mV @ 10mA, 50mA 500 V
2SD1803T-TL-H
2SD1803T-TL-H
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On Semiconductor
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 - - - - - - - - 5 A 200 @ 500mA, 2V - - - 180MHz - - Surface Mount 150°C (TJ) 1 W - - TP-FA - NPN 400mV @ 150mA, 3A 50 V
CXTA42 TR PBFREE
CXTA42 TR PBFREE
Download Datasheet for CXTA42 TR PBFREE
Central Semiconductor Corp
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 - - - - - - - - 500 mA 40 @ 30mA, 10V - - - 50MHz - - Surface Mount -65°C ~ 150°C (TJ) 1.2 W - - SOT-89 - NPN 500mV @ 2mA, 20mA 300 V
2N4401,116
2N4401,116
Download Datasheet for 2N4401,116
NXP Semiconductors
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 - - - - - - - - 600 mA 100 @ 150mA, 1V - - - 250MHz - - Through Hole 150°C (TJ) 630 mW - - TO-92-3 - NPN 750mV @ 50mA, 500mA 40 V
BC337-16,126
BC337-16,126
Download Datasheet for BC337-16,126
NXP Semiconductors
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 700mV @ 50mA, 500mA 45 V
BC337-25,126
BC337-25,126
Download Datasheet for BC337-25,126
NXP Semiconductors
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 700mV @ 50mA, 500mA 45 V
PN2222A,116
PN2222A,116
NXP Semiconductors
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 1V @ 50mA, 500mA 40 V
PN2907A,116
PN2907A,116
NXP Semiconductors
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 1.6V @ 50mA, 500mA 60 V
MJW0281A
MJW0281A
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On Semiconductor
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 - - - - - - - - 15 A 75 @ 3A, 5V - - - 30MHz - - Through Hole -65°C ~ 150°C (TJ) 150 W - - TO-247-3 - NPN 1V @ 500mA, 5A 260 V
MJW0302A
MJW0302A
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On Semiconductor
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 - - - - - - - - 15 A 75 @ 3A, 5V - - - 30MHz - - Through Hole -65°C ~ 150°C (TJ) 150 W - - TO-247-3 - PNP 1V @ 500mA, 5A 260 V
NJL1302D
NJL1302D
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On Semiconductor
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 - - - - - - - - 15 A 75 @ 5A, 5V - - - 30MHz - - Through Hole -65°C ~ 150°C (TJ) 200 W - - TO-264 - PNP 3V @ 1A, 10A 260 V
NJL3281D
NJL3281D
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On Semiconductor
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 - - - - - - - - 15 A 75 @ 5A, 5V - - - 30MHz - - Through Hole -65°C ~ 150°C (TJ) 200 W - - TO-264 - NPN 3V @ 1A, 10A 260 V
2SA1207T-AA
2SA1207T-AA
Sanyo Denki
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2SA1837(F,M)
2SA1837(F,M)
Download Datasheet for 2SA1837(F,M)
Toshiba
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - 70MHz - - Through Hole 150°C (TJ) 2 W - - TO-220NIS - PNP 1.5V @ 50mA, 500mA 230 V
2SA1962-O(Q)
2SA1962-O(Q)
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Toshiba
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 - - - - - - - - 15 A 80 @ 1A, 5V - - - 30MHz - - Through Hole 150°C (TJ) 130 W - - TO-3P(N) - PNP 3V @ 800mA, 8A 230 V
2SC4793(F,M)
2SC4793(F,M)
Download Datasheet for 2SC4793(F,M)
Toshiba
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - 100MHz - - Through Hole 150°C (TJ) 2 W - - TO-220NIS - NPN 1.5V @ 50mA, 500mA 230 V
2N4403RLRAG
2N4403RLRAG
Download Datasheet for 2N4403RLRAG
On Semiconductor
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 - - - - - - - - 600 mA 100 @ 150mA, 2V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 750mV @ 50mA, 500mA 40 V
2N5087RLRAG
2N5087RLRAG
Download Datasheet for 2N5087RLRAG
On Semiconductor
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 - - - - - - - - 50 mA 250 @ 100µA, 5V - - - 40MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 300mV @ 1mA, 10mA 50 V
TE02463T
TE02463T
On Semiconductor
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2N5550G
2N5550G
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On Semiconductor
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 - - - - - - - - 600 mA 60 @ 10mA, 5V - - - 300MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 250mV @ 5mA, 50mA 140 V
Showing 12001-12050 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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