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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
MJ10004
MJ10004
NTE Electronics
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 - - - - - - - - 20 A 50 @ 5A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 175 W - - TO-3 - NPN - Darlington 3V @ 2A, 20A 350 V
NTE100
NTE100
NTE Electronics
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 - - - - - - - - 100 mA 30 @ 12mA, 150mV - - - - - - Through Hole 85°C (TJ) 150 mW - - TO-5 - PNP 200mV @ 1mA, 24mA 24 V
NTE2541
NTE2541
NTE Electronics
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 - - - - - - - - 25 A 2000 @ 12A, 4V - - - - - - Through Hole 150°C (TJ) 120 W - - TO-3P - NPN - Darlington 1.8V @ 24mA, 12A 120 V
2N3442
2N3442
NTE Electronics
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 - - - - - - - - 10 A 20 @ 3A, 4V - - - 80MHz - - Through Hole -65°C ~ 200°C (TJ) 117 W - - TO-204 (TO-3) - NPN 5V @ 2A, 10A 140 V
NTE300MP
NTE300MP
NTE Electronics
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 - - - - - - - - 1.5 A 55 @ 500mA, 4V - - - - - - Through Hole 150°C (TJ) 7 W - - - - NPN 1V @ 50mA, 1A 40 V
H5N2305P-E
H5N2305P-E
Renesas
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BSR18A_D87Z
BSR18A_D87Z
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On Semiconductor
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 250MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23-3 - PNP 400mV @ 5mA, 50mA 40 V
BSR50_D74Z
BSR50_D74Z
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 - - - - - - - - 1.5 A 2000 @ 500mA, 10V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1.6V @ 4mA, 1A 45 V
2N7052_D74Z
2N7052_D74Z
On Semiconductor
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 - - - - - - - - 1.5 A 1000 @ 1A, 5V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1.5V @ 100µA, 100mA 100 V
BC639_D74Z
BC639_D74Z
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - NPN 500mV @ 50mA, 500mA 80 V
PDTA143XQA147
PDTA143XQA147
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NXP Semiconductors
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BC639_D75Z
BC639_D75Z
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - NPN 500mV @ 50mA, 500mA 80 V
BDW93A
BDW93A
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 - - - - - - - - 12 A 750 @ 5A, 3V - - - - - - Through Hole 150°C (TJ) 80 W - - TO-220-3 - NPN - Darlington 3V @ 100mA, 10A 60 V
BU407
BU407
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 - - - - - - - - 7 A - - - - 10MHz - - Through Hole 150°C (TJ) 60 W - - TO-220-3 - NPN 1V @ 500mA, 5A 150 V
BU407TU
BU407TU
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 - - - - - - - - 7 A - - - - 10MHz - - Through Hole 150°C (TJ) 60 W - - TO-220-3 - NPN 1V @ 500mA, 5A 150 V
2N5551_J05Z
2N5551_J05Z
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 - - - - - - - - 600 mA 80 @ 10mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 200mV @ 5mA, 50mA 160 V
2N7053_D26Z
2N7053_D26Z
On Semiconductor
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 - - - - - - - - 1.5 A 1000 @ 1A, 5V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-226-3 - NPN - Darlington 1.5V @ 100µA, 100mA 100 V
2N7053_D75Z
2N7053_D75Z
On Semiconductor
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 - - - - - - - - 1.5 A 1000 @ 1A, 5V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-226-3 - NPN - Darlington 1.5V @ 100µA, 100mA 100 V
BC33716TF
BC33716TF
On Semiconductor
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 - - - - - - - - 800 mA 100 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 700mV @ 50mA, 500mA 45 V
BC639_D26Z
BC639_D26Z
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - NPN 500mV @ 50mA, 500mA 80 V
BC639_D27Z
BC639_D27Z
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - NPN 500mV @ 50mA, 500mA 80 V
BC639_D81Z
BC639_D81Z
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - NPN 500mV @ 50mA, 500mA 80 V
BCV27_D87Z
BCV27_D87Z
On Semiconductor
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 - - - - - - - - 1.2 A 20000 @ 100mA, 5V - - - 220MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23-3 - NPN - Darlington 1V @ 100µA, 100mA 30 V
2N5210NMBU
2N5210NMBU
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 - - - - - - - - 100 mA 200 @ 100µA, 5V - - - 30MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 700mV @ 1mA, 10mA 50 V
2N5210TAR
2N5210TAR
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 - - - - - - - - 100 mA 200 @ 100µA, 5V - - - 30MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 700mV @ 1mA, 10mA 50 V
2N6428ABU
2N6428ABU
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 - - - - - - - - 200 mA 250 @ 100µA, 5V - - - 700MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 50 V
2N6428ATA
2N6428ATA
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 - - - - - - - - 200 mA 250 @ 100µA, 5V - - - 700MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 50 V
2N3640
2N3640
Central Semiconductor Corp
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 - - - - - - - - 10nA (ICBO) 30 @ 10mA, 300mV - - - 500MHz - - Through Hole - - - - TO-106 - PNP - 12 V
BC238ABU
BC238ABU
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 25 V
BC238ATA
BC238ATA
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 25 V
BC238ATF
BC238ATF
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 25 V
BC238BU
BC238BU
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 25 V
BC238CTA
BC238CTA
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 - - - - - - - - 100 mA 380 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 25 V
BC238TAR
BC238TAR
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 25 V
BC238TF
BC238TF
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 25 V
BC238TFR
BC238TFR
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 25 V
BC239CBU
BC239CBU
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 - - - - - - - - 100 mA 380 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 25 V
BC337ABU
BC337ABU
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 - - - - - - - - 800 mA 100 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 700mV @ 50mA, 500mA 45 V
BD158STU
BD158STU
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On Semiconductor
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 - - - - - - - - 500 mA 30 @ 50mA, 10V - - - - - - Through Hole - 20 W - - TO-126-3 - NPN - 300 V
BC337BU
BC337BU
On Semiconductor
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 - - - - - - - - 800 mA 100 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 700mV @ 50mA, 500mA 45 V
BC337TFR
BC337TFR
On Semiconductor
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 - - - - - - - - 800 mA 100 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 700mV @ 50mA, 500mA 45 V
BC33816BU
BC33816BU
On Semiconductor
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 - - - - - - - - 800 mA 100 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 700mV @ 50mA, 500mA 25 V
BC33816TA
BC33816TA
On Semiconductor
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 - - - - - - - - 800 mA 100 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 700mV @ 50mA, 500mA 25 V
BC338BU
BC338BU
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 - - - - - - - - 800 mA 100 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 700mV @ 50mA, 500mA 25 V
BC338TF
BC338TF
On Semiconductor
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 - - - - - - - - 800 mA 100 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 700mV @ 50mA, 500mA 25 V
BC338TFR
BC338TFR
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 - - - - - - - - 800 mA 100 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 700mV @ 50mA, 500mA 25 V
BC546BU
BC546BU
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 65 V
BC546TA
BC546TA
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 65 V
BC546TAR
BC546TAR
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 65 V
BC546TF
BC546TF
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 65 V
Showing 11201-11250 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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