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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
APT13003DZTR-G1
APT13003DZTR-G1
Diodes Incorporated
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 1.5 A 5 @ 1A, 2V 4MHz Through Hole -65°C ~ 150°C (TJ) 1.1 W TO-92 NPN 400mV @ 250mA, 1A 450 V
APT13005DI-G1
APT13005DI-G1
Download Datasheet for APT13005DI-G1
Diodes Incorporated
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 4 A 8 @ 2A, 5V 4MHz Through Hole -65°C ~ 150°C (TJ) 25 W TO-251 NPN 900mV @ 1A, 4A 450 V
APT13005DTF-G1
APT13005DTF-G1
Download Datasheet for APT13005DTF-G1
Diodes Incorporated
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 4 A 8 @ 2A, 5V 4MHz Through Hole -65°C ~ 150°C (TJ) 28 W TO-220F-3 NPN 900mV @ 1A, 4A 450 V
APT13005DT-G1
APT13005DT-G1
Download Datasheet for APT13005DT-G1
Diodes Incorporated
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 4 A 8 @ 2A, 5V 4MHz Through Hole -65°C ~ 150°C (TJ) 75 W TO-220-3 NPN 900mV @ 1A, 4A 450 V
DXT13003DK-13
DXT13003DK-13
Download Datasheet for DXT13003DK-13
Diodes Incorporated
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 1.5 A 16 @ 500mA, 2V 4MHz Surface Mount -55°C ~ 150°C (TJ) 1.6 W TO-252-3 NPN 400mV @ 250mA, 1A 450 V
2STR1240
2STR1240
STMicroelectronics
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2N2218
2N2218
Microchip Technology
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 800 mA 40 @ 150mA, 10V - Through Hole -55°C ~ 200°C (TJ) 800 mW TO-39 (TO-205AD) NPN 1.6V @ 50mA, 500mA 30 V
JAN2N2218A
JAN2N2218A
Microchip Technology
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 800 mA 40 @ 150mA, 10V - Through Hole -55°C ~ 200°C (TJ) 800 mW TO-39 (TO-205AD) NPN 1V @ 50mA, 500mA 50 V
JANTXV2N2218A
JANTXV2N2218A
Microchip Technology
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 800 mA 40 @ 150mA, 10V - Through Hole -55°C ~ 200°C (TJ) 800 mW TO-39 (TO-205AD) NPN 1V @ 50mA, 500mA 50 V
2N2432A
2N2432A
Microchip Technology
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 100 mA 80 @ 1mA, 5V - Through Hole -65°C ~ 175°C (TJ) 300 mW TO-18 (TO-206AA) NPN - 30 V
JANTX2N2904
JANTX2N2904
Microchip Technology
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 600 mA 40 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 800 mW TO-39 (TO-205AD) PNP 1.6V @ 50mA, 500mA 40 V
2N2944AUB
2N2944AUB
Microsemi Corporation
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 100 mA 100 @ 1mA, 500mV - Surface Mount -65°C ~ 200°C (TJ) 400 mW UB PNP - 10 V
2N2945AUB
2N2945AUB
Microchip Technology
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 100 mA 70 @ 1mA, 500mV - Surface Mount -65°C ~ 200°C (TJ) 400 mW UB PNP - 20 V
JANTXV2N3055
JANTXV2N3055
Microchip Technology
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 15 A 20 @ 4A, 4V - Through Hole -65°C ~ 200°C (TJ) 6 W TO-3 (TO-204AA) NPN 2V @ 3.3A, 10A 70 V
2N3635UB
2N3635UB
Microchip Technology
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 1 A 100 @ 50mA, 10V - Surface Mount -65°C ~ 200°C (TJ) 1.5 W 3-SMD PNP 600mV @ 5mA, 50mA 140 V
JANTX2N3635UB
JANTX2N3635UB
Microchip Technology
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 1 A 100 @ 50mA, 10V - Surface Mount -65°C ~ 200°C (TJ) 1.5 W 3-SMD PNP 600mV @ 5mA, 50mA 140 V
JANTX2N3637UB
JANTX2N3637UB
Microchip Technology
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 1 A 100 @ 50mA, 10V - Surface Mount -65°C ~ 200°C (TJ) 1.5 W 3-SMD PNP 600mV @ 5mA, 50mA 175 V
JAN2N3715
JAN2N3715
Microchip Technology
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 10 A 30 @ 3A, 2V - Through Hole -65°C ~ 200°C (TJ) 5 W TO-3 (TO-204AA) NPN 2.5V @ 2A, 10A 60 V
JANTXV2N3740
JANTXV2N3740
Microchip Technology
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 4 A 30 @ 250mA, 1V - Through Hole -65°C ~ 200°C (TJ) 25 W TO-66 (TO-213AA) PNP 600mV @ 125mA, 1A 60 V
JANTX2N3749
JANTX2N3749
Microchip Technology
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 5 A 40 @ 1A, 2V - Chassis, Stud Mount -65°C ~ 200°C (TJ) 2 W TO-111 NPN 1.5V @ 500mA, 5A 80 V
JANTXV2N3749
JANTXV2N3749
Microchip Technology
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 5 A 40 @ 1A, 2V - Chassis, Stud Mount -65°C ~ 200°C (TJ) 2 W TO-111 NPN 1.5V @ 500mA, 5A 80 V
JAN2N3867
JAN2N3867
Microchip Technology
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 3 mA 40 @ 1.5A, 2V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5 PNP 1.5V @ 250mA, 2.5A 40 V
JANTXV2N3867
JANTXV2N3867
Microchip Technology
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 3 mA 40 @ 1.5A, 2V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5 PNP 1.5V @ 250mA, 2.5A 40 V
JAN2N3868
JAN2N3868
Microchip Technology
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 3 mA 30 @ 1.5A, 2V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5 PNP 1.5V @ 250mA, 2.5A 60 V
2N3960
2N3960
Microsemi Corporation
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 10µA (ICBO) 60 @ 10mA, 1V - Through Hole -65°C ~ 200°C (TJ) 400 mW TO-18 (TO-206AA) NPN 300mV @ 3mA, 30mA 12 V
JANTXV2N4261
JANTXV2N4261
Microchip Technology
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 30 mA 30 @ 10mA, 1V - Through Hole -65°C ~ 200°C (TJ) 200 mW TO-72 PNP 350mV @ 1mA, 10mA 15 V
2N4261UB
2N4261UB
Microchip Technology
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 30 mA 30 @ 10mA, 1V - Surface Mount -65°C ~ 200°C (TJ) 200 mW UB PNP 350mV @ 1mA, 10mA 15 V
JAN2N4261UB
JAN2N4261UB
Microchip Technology
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 30 mA 30 @ 10mA, 1V - Surface Mount -65°C ~ 200°C (TJ) 200 mW UB PNP 350mV @ 1mA, 10mA 15 V
JANTX2N4261UB
JANTX2N4261UB
Microchip Technology
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 30 mA 30 @ 10mA, 1V - Surface Mount -65°C ~ 200°C (TJ) 200 mW UB PNP 350mV @ 1mA, 10mA 15 V
JANTXV2N4261UB
JANTXV2N4261UB
Microchip Technology
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 30 mA 30 @ 10mA, 1V - Surface Mount -65°C ~ 200°C (TJ) 200 mW UB PNP 350mV @ 1mA, 10mA 15 V
2N4405
2N4405
Microchip Technology
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JANTX2N5004
JANTX2N5004
Microchip Technology
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 5 A 70 @ 2.5A, 5V - Chassis, Stud Mount -65°C ~ 200°C (TJ) 2 W TO-59 NPN 1.5V @ 500mA, 5A 80 V
JAN2N5153
JAN2N5153
Microchip Technology
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 2 A 70 @ 2.5A, 5V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) PNP 1.5V @ 500mA, 5A 80 V
JAN2N5154
JAN2N5154
Microchip Technology
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 2 A 70 @ 2.5A, 5V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) NPN 1.5V @ 500mA, 5A 80 V
JANTXV2N5154
JANTXV2N5154
Microchip Technology
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 2 A 70 @ 2.5A, 5V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) NPN 1.5V @ 500mA, 5A 80 V
JANTXV2N5154L
JANTXV2N5154L
Microchip Technology
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 2 A 70 @ 2.5A, 5V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5 NPN 1.5V @ 500mA, 5A 80 V
JANTXV2N5237
JANTXV2N5237
Microchip Technology
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 10 A 40 @ 5A, 5V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5 NPN 2.5V @ 1A, 10A 120 V
JAN2N6546
JAN2N6546
Microchip Technology
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 15 A 12 @ 5A, 2V - Through Hole -65°C ~ 200°C (TJ) 175 W TO-204AA (TO-3) NPN 5V @ 3A, 15A 300 V
JANTX2N6546
JANTX2N6546
Microchip Technology
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 15 A 12 @ 5A, 2V - Through Hole -65°C ~ 200°C (TJ) 175 W TO-204AA (TO-3) NPN 5V @ 3A, 15A 300 V
JANTXV2N6546
JANTXV2N6546
Microchip Technology
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 15 A 12 @ 5A, 2V - Through Hole -65°C ~ 200°C (TJ) 175 W TO-204AA (TO-3) NPN 5V @ 3A, 15A 300 V
JANTXV2N6547
JANTXV2N6547
Microchip Technology
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 15 A 12 @ 5A, 2V - Through Hole -65°C ~ 200°C (TJ) 175 W TO-204AA (TO-3) NPN 5V @ 3A, 15A 400 V
2SC3624-T1B-A
2SC3624-T1B-A
Renesas
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 150 mA 1000 @ 1mA, 5V 250MHz Surface Mount 150°C (TJ) 200 mW SC-59 NPN 300mV @ 5mA, 50mA 50 V
APT17NTR-G1
APT17NTR-G1
Diodes Incorporated
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 50 mA 20 @ 10mA, 20V - Surface Mount -55°C ~ 150°C (TJ) 200 mW SOT-23-3 NPN - 480 V
CP127-2N6301-CT
CP127-2N6301-CT
Download Datasheet for CP127-2N6301-CT
Central Semiconductor Corp
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 8 A 750 @ 4A, 3V 4MHz Surface Mount -65°C ~ 200°C (TJ) - Die NPN - Darlington 3V @ 80mA, 8A 80 V
CP191V-2N2222A-CT
CP191V-2N2222A-CT
Download Datasheet for CP191V-2N2222A-CT
Central Semiconductor Corp
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 800 mA 100 @ 150mA, 10V 300MHz Surface Mount -65°C ~ 150°C (TJ) - Die NPN 1V @ 50mA, 500mA 40 V
CP305-2N3019-CT
CP305-2N3019-CT
Download Datasheet for CP305-2N3019-CT
Central Semiconductor Corp
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 1 A 100 @ 150mA, 10V 100MHz Surface Mount -65°C ~ 150°C (TJ) - Die NPN 500mV @ 50mA, 500mA 80 V
CP310-MPSA42-CT
CP310-MPSA42-CT
Download Datasheet for CP310-MPSA42-CT
Central Semiconductor Corp
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 500 mA 40 @ 30mA, 10V - Surface Mount -65°C ~ 150°C (TJ) - Die NPN 500mV @ 2mA, 20mA 300 V
CP336V-2N5551-CT
CP336V-2N5551-CT
Download Datasheet for CP336V-2N5551-CT
Central Semiconductor Corp
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 600 mA 80 @ 10mA, 5V 300MHz Surface Mount -65°C ~ 150°C (TJ) - Die NPN 200mV @ 5mA, 50mA 160 V
2SC3332T-AA
2SC3332T-AA
Download Datasheet for 2SC3332T-AA
On Semiconductor
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 700 mA 100 @ 100mA, 5V 120MHz Through Hole 150°C (TJ) 700 mW 3-NP NPN 400mV @ 25mA, 250mA 160 V
2SD1207S-AE
2SD1207S-AE
Download Datasheet for 2SD1207S-AE
On Semiconductor
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 2 A 100 @ 100mA, 2V 150MHz Through Hole 150°C (TJ) 1 W 3-MP NPN 400mV @ 50mA, 1A 50 V
Showing 10451-10500 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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