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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
ST2408HI
ST2408HI
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STMicroelectronics
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 - - - - - - - - 12 A 6 @ 8A, 5V - - - - - - Through Hole 150°C (TJ) 55 W - - ISOWATT-218 - NPN 3V @ 2A, 8A 600 V
ST8812FP
ST8812FP
STMicroelectronics
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 - - - - - - - - 7 A 4.5 @ 5A, 5V - - - - - - Through Hole 150°C (TJ) 36 W - - TO-220FP - NPN 3V @ 800mA, 4A 600 V
STBV68
STBV68
STMicroelectronics
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 - - - - - - - - 600 mA 3 @ 250mA, 10V - - - - - - Through Hole 150°C (TJ) 900 mW - - TO-92-3 - NPN 5V @ 100mA, 250mA 400 V
STF724
STF724
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STMicroelectronics
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 - - - - - - - - 3 A 100 @ 100mA, 2V - - - 100MHz - - Surface Mount - 1.4 W - - SOT-89-3 - NPN 1.1V @ 150mA, 3A 30 V
STPSA42-AP
STPSA42-AP
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STMicroelectronics
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 - - - - - - - - 500 mA 40 @ 30mA, 10V - - - 50MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92AP - NPN 500mV @ 2mA, 20mA 300 V
STX112
STX112
STMicroelectronics
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 - - - - - - - - 2 A 1000 @ 1A, 4V - - - - - - Through Hole 150°C (TJ) 1.2 W - - TO-92-3 - NPN - Darlington 2.5V @ 8mA, 2A 100 V
SS9014ABU
SS9014ABU
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 - - - - - - - - 100 mA 60 @ 1mA, 5V - - - 270MHz - - Through Hole 150°C (TJ) 450 mW - - TO-92-3 - NPN 300mV @ 5mA, 100mA 45 V
KSC945LBU
KSC945LBU
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 - - - - - - - - 150 mA 350 @ 1mA, 6V - - - 300MHz - - Through Hole 150°C (TJ) 250 mW - - TO-92-3 - NPN 300mV @ 10mA, 100mA 50 V
KSC945OBU
KSC945OBU
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 - - - - - - - - 150 mA 70 @ 1mA, 6V - - - 300MHz - - Through Hole 150°C (TJ) 250 mW - - TO-92-3 - NPN 300mV @ 10mA, 100mA 50 V
KSC945OTA
KSC945OTA
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 - - - - - - - - 150 mA 70 @ 1mA, 6V - - - 300MHz - - Through Hole 150°C (TJ) 250 mW - - TO-92-3 - NPN 300mV @ 10mA, 100mA 50 V
SS9013FTF
SS9013FTF
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 - - - - - - - - 500 mA 78 @ 50mA, 1V - - - - - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 600mV @ 50mA, 500mA 20 V
SS9013HTA
SS9013HTA
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 - - - - - - - - 500 mA 144 @ 50mA, 1V - - - - - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 600mV @ 50mA, 500mA 20 V
FJN3301RBU
FJN3301RBU
On Semiconductor
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 - - - - - - - - 100 mA 20 @ 10mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 300 mW - - TO-92-3 - NPN 300mV @ 500µA, 10mA 50 V
KSC1008YTF
KSC1008YTF
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 - - - - - - - - 700 mA 120 @ 50mA, 2V - - - 50MHz - - Through Hole 150°C (TJ) 800 mW - - TO-92-3 - NPN 400mV @ 50mA, 500mA 60 V
KSC1008RTA
KSC1008RTA
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 - - - - - - - - 700 mA 40 @ 50mA, 2V - - - 50MHz - - Through Hole 150°C (TJ) 800 mW - - TO-92-3 - NPN 400mV @ 50mA, 500mA 60 V
ICD22V03X1SA1
ICD22V03X1SA1
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Infineon Technologies
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KSA733OBU
KSA733OBU
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 - - - - - - - - 150 mA 70 @ 1mA, 6V - - - 180MHz - - Through Hole 150°C (TJ) 250 mW - - TO-92-3 - PNP 300mV @ 10mA, 100mA 50 V
KSA733LBU
KSA733LBU
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 - - - - - - - - 150 mA 350 @ 1mA, 6V - - - 180MHz - - Through Hole 150°C (TJ) 250 mW - - TO-92-3 - PNP 300mV @ 10mA, 100mA 50 V
KSP6521BU
KSP6521BU
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 - - - - - - - - 100 mA 300 @ 2mA, 10V - - - - - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 500mV @ 5mA, 50mA 25 V
KSP8098TF
KSP8098TF
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 - - - - - - - - 500 mA 100 @ 1mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 300mV @ 10mA, 100mA 60 V
KST2484MTF
KST2484MTF
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 - - - - - - - - 50 mA 250 @ 1mA, 5V - - - - - - Surface Mount - 350 mW - - SOT-23-3 - NPN 350mV @ 100µA, 1mA 60 V
KST5089MTF
KST5089MTF
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 - - - - - - - - 50 mA 400 @ 100µA, 5V - - - 50MHz - - Surface Mount - 350 mW - - SOT-23-3 - NPN 500mV @ 1mA, 10mA 25 V
KSP8098CTA
KSP8098CTA
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 - - - - - - - - 500 mA 100 @ 1mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 300mV @ 10mA, 100mA 60 V
KSP8098CBU
KSP8098CBU
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 - - - - - - - - 500 mA 100 @ 1mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 300mV @ 10mA, 100mA 60 V
KSP6520BU
KSP6520BU
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 - - - - - - - - 100 mA 200 @ 2mA, 10V - - - - - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 500mV @ 5mA, 50mA 25 V
KSP6521NBU
KSP6521NBU
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 - - - - - - - - 100 mA 300 @ 2mA, 10V - - - - - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 500mV @ 5mA, 50mA 25 V
KSA539CYBU
KSA539CYBU
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 - - - - - - - - 200 mA 120 @ 50mA, 1V - - - - - - Through Hole 150°C (TJ) 400 mW - - TO-92-3 - PNP 500mV @ 15mA, 150mA 45 V
KSC1675YBU
KSC1675YBU
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 - - - - - - - - 50 mA 120 @ 1mA, 6V - - - 300MHz - - Through Hole - 250 mW - - TO-92-3 - NPN 300mV @ 1mA, 10mA 30 V
KSC1675CRBU
KSC1675CRBU
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 - - - - - - - - 50 mA 40 @ 1mA, 6V - - - 300MHz - - Through Hole - 250 mW - - TO-92-3 - NPN 300mV @ 1mA, 10mA 30 V
KSC1675YS1TA
KSC1675YS1TA
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 - - - - - - - - 50 mA 120 @ 1mA, 6V - - - 300MHz - - Through Hole - 250 mW - - TO-92-3 - NPN 300mV @ 1mA, 10mA 30 V
KSC1675OBU
KSC1675OBU
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 - - - - - - - - 50 mA 70 @ 1mA, 6V - - - 300MHz - - Through Hole - 250 mW - - TO-92-3 - NPN 300mV @ 1mA, 10mA 30 V
KSC1675YTA
KSC1675YTA
On Semiconductor
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 - - - - - - - - 50 mA 120 @ 1mA, 6V - - - 300MHz - - Through Hole - 250 mW - - TO-92-3 - NPN 300mV @ 1mA, 10mA 30 V
KSC388YTA
KSC388YTA
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 - - - - - - - - 50 mA 20 @ 12.5mA, 12.5V - - - 300MHz - - Through Hole 150°C (TJ) 300 mW - - TO-92-3 - NPN 200mV @ 1.5mA, 15mA 25 V
KSA812OMTF
KSA812OMTF
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 - - - - - - - - 100 mA 90 @ 1mA, 6V - - - 180MHz - - Surface Mount 150°C (TJ) 150 mW - - SOT-23-3 - PNP 300mV @ 10mA, 100mA 50 V
KSA812GAMTF
KSA812GAMTF
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 - - - - - - - - 100 mA 200 @ 1mA, 6V - - - 180MHz - - Surface Mount 150°C (TJ) 150 mW - - SOT-23-3 - PNP 300mV @ 10mA, 100mA 50 V
KSC1187OTA
KSC1187OTA
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 - - - - - - - - 30 mA 70 @ 2mA, 10V - - - 700MHz - - Through Hole 150°C (TJ) 250 mW - - TO-92-3 - NPN - 20 V
KSC388CYBU
KSC388CYBU
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 - - - - - - - - 50 mA 20 @ 12.5mA, 12.5V - - - 300MHz - - Through Hole 150°C (TJ) 300 mW - - TO-92-3 - NPN 200mV @ 1.5mA, 15mA 25 V
KSC388CTA
KSC388CTA
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 - - - - - - - - 50 mA 20 @ 12.5mA, 12.5V - - - 300MHz - - Through Hole 150°C (TJ) 300 mW - - TO-92-3 - NPN 200mV @ 1.5mA, 15mA 25 V
KSC1187YTA
KSC1187YTA
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 - - - - - - - - 30 mA 120 @ 2mA, 10V - - - 700MHz - - Through Hole 150°C (TJ) 250 mW - - TO-92-3 - NPN - 20 V
KSD227GBU
KSD227GBU
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 - - - - - - - - 300 mA 200 @ 50mA, 1V - - - - - - Through Hole 150°C (TJ) 400 mW - - TO-92-3 - NPN 400mV @ 30mA, 300mA 25 V
KSA539YTA
KSA539YTA
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 - - - - - - - - 200 mA 120 @ 50mA, 1V - - - - - - Through Hole 150°C (TJ) 400 mW - - TO-92-3 - PNP 500mV @ 15mA, 150mA 45 V
KSC815CYTA
KSC815CYTA
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 - - - - - - - - 200 mA 120 @ 50mA, 1V - - - 200MHz - - Through Hole 150°C (TJ) 400 mW - - TO-92-3 - NPN 400mV @ 15mA, 150mA 45 V
KSC815COBU
KSC815COBU
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 - - - - - - - - 200 mA 70 @ 50mA, 1V - - - 200MHz - - Through Hole 150°C (TJ) 400 mW - - TO-92-3 - NPN 400mV @ 15mA, 150mA 45 V
KSD227YTA
KSD227YTA
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 - - - - - - - - 300 mA 120 @ 50mA, 1V - - - - - - Through Hole 150°C (TJ) 400 mW - - TO-92-3 - NPN 400mV @ 30mA, 300mA 25 V
PN2222ATAR
PN2222ATAR
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 - - - - - - - - 1 A 100 @ 150mA, 10V - - - 300MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 1V @ 50mA, 500mA 40 V
PN2222TAR
PN2222TAR
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 1V @ 50mA, 500mA 30 V
KSA642OBU
KSA642OBU
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 - - - - - - - - 300 mA 70 @ 50mA, 1V - - - - - - Through Hole 150°C (TJ) 400 mW - - TO-92-3 - PNP 600mV @ 30mA, 300mA 25 V
PN4141
PN4141
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 - - - - - - - - 500 mA 100 @ 150mA, 10V - - - - - - Through Hole - 625 mW - - TO-92-3 - NPN 1.6V @ 50mA, 500mA 30 V
KSA1175RTA
KSA1175RTA
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 - - - - - - - - 150 mA 40 @ 1mA, 6V - - - 180MHz - - Through Hole 150°C (TJ) 250 mW - - TO-92S - PNP 300mV @ 10mA, 100mA 50 V
KSP24BU
KSP24BU
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 - - - - - - - - 100 mA 30 @ 8mA, 10V - - - 620MHz - - Through Hole 135°C (TJ) 350 mW - - TO-92-3 - NPN - 30 V
Showing 9951-10000 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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