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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2N5492
2N5492
Harris Semiconductor
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 - - - - - - - - 7 A 20 @ 2.5A, 4V - - - 800kHz - - Through Hole -65°C ~ 150°C (TJ) 50 W - - TO-220-3 - NPN 1V @ 250mA, 2.5A 55 V
2N5490
2N5490
Harris Semiconductor
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 - - - - - - - - 7 A 20 @ 2A, 4V - - - 800kHz - - Through Hole -65°C ~ 150°C (TJ) 50 W - - TO-220-3 - NPN 1V @ 200mA, 2A 40 V
2SB827R
2SB827R
On Semiconductor
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TIP32B
TIP32B
NTE Electronics
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 - - - - - - - - 3 A 10 @ 3A, 4V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - PNP 1.2V @ 375mA, 3A 80 V
TIP42A
TIP42A
NTE Electronics
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 - - - - - - - - 6 A 15 @ 3A, 4V - - - - - - Through Hole 150°C (TJ) 2 W - - TO-220 - PNP 1.5V @ 600mA, 6A 60 V
TIP41C
TIP41C
NTE Electronics
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 - - - - - - - - 6 A 15 @ 3A, 4V - - - 3MHz - - Through Hole 150°C (TJ) 2 W - - TO-220-3 - NPN 1.5V @ 600mA, 6A 100 V
NTE85
NTE85
NTE Electronics
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 - - - - - - - - 500 mA 100 @ 50mA, 2V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 600mV @ 5mA, 100mA 30 V
TIP112
TIP112
NTE Electronics
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 - - - - - - - - 2 A 1000 @ 1A, 4V - - - - - - Through Hole 150°C (TJ) 2 W - - TO-220 - NPN - Darlington 2.5V @ 8mA, 2A 100 V
TIP100
TIP100
NTE Electronics
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 - - - - - - - - 8 A 1000 @ 3A, 4V - - - 4MHz - - Through Hole -65°C ~ 150°C (TJ) 80 W - - TO-220-3 - NPN - Darlington 2.5V @ 80mA, 8A 60 V
TIP121
TIP121
NTE Electronics
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 - - - - - - - - 5 A 1000 @ 3A, 3V - - - 4MHz - - Through Hole -65°C ~ 150°C (TJ) 65 W - - TO-220-3 - NPN - Darlington 4V @ 20mA, 5A 80 V
SJC4196FP
SJC4196FP
On Semiconductor
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ZTX968
ZTX968
Download Datasheet for ZTX968
Diodes Incorporated
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 - - - - - - - - 4.5 A 300 @ 500mA, 1V - - - 80MHz - - Through Hole -55°C ~ 200°C (TJ) 1.58 W - - E-Line (TO-92 compatible) - PNP 300mV @ 200mA, 5A 12 V
TIP32C
TIP32C
NTE Electronics
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 - - - - - - - - 3 A 10 @ 3A, 4V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - PNP 1.2V @ 375mA, 3A 100 V
2N4923
2N4923
NTE Electronics
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 - - - - - - - - 1 A 30 @ 500mA, 1V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 30 W - - TO-126 - NPN 600mV @ 100mA, 1A 80 V
MJE340
MJE340
NTE Electronics
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 - - - - - - - - 500 mA 30 @ 50mA, 10V - - - - - - Through Hole - 20 W - - TO-126 - NPN - 300 V
2N6039
2N6039
NTE Electronics
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 - - - - - - - - 4 A 750 @ 2A, 3V - - - - - - Through Hole 150°C (TJ) 40 W - - SOT-32-3 - NPN - Darlington 3V @ 40mA, 4A 80 V
TIP122
TIP122
NTE Electronics
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 - - - - - - - - 5 A 1000 @ 3A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - NPN - Darlington 4V @ 20mA, 5A 100 V
TIP101
TIP101
NTE Electronics
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 - - - - - - - - 8 A 1000 @ 3A, 4V - - - 4MHz - - Through Hole -65°C ~ 150°C (TJ) 80 W - - TO-220-3 - NPN - Darlington 2.5V @ 80mA, 8A 80 V
TIP42B
TIP42B
NTE Electronics
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 - - - - - - - - 6 A 30 @ 300mA, 4V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - PNP 1.5V @ 600mA, 6A 80 V
2N3019
2N3019
NTE Electronics
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 - - - - - - - - 1 A 100 @ 150mA, 10V - - - 100MHz - - Through Hole 175°C (TJ) 800 mW - - TO-39 - NPN 500mV @ 50mA, 500mA 80 V
2N2907A
2N2907A
NTE Electronics
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 400 mW - - TO-18 - PNP 1.6V @ 50mA, 500mA 60 V
BFT19B
BFT19B
Harris Semiconductor
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 - - - - - - - - 1 A 25 @ 5mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-205AD - PNP 2.5V @ 3mA, 30mA 400 V
2N6134
2N6134
Harris Semiconductor
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BLF184XR112
BLF184XR112
NXP Semiconductors
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ZTX1048A
ZTX1048A
Download Datasheet for ZTX1048A
Diodes Incorporated
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 - - - - - - - - 4 A 300 @ 1A, 2V - - - 150MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - NPN 245mV @ 20mA, 4A 17.5 V
2N6123
2N6123
NTE Electronics
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 - - - - - - - - 4 A 20 @ 1.5A, 2V - - - 2.5MHz - - Through Hole -65°C ~ 150°C (TJ) 40 W - - TO-220 - NPN 1.4V @ 1A, 4A 80 V
2N6125
2N6125
NTE Electronics
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 - - - - - - - - 4 A 20 @ 1.5A, 2V - - - 2.5MHz - - Through Hole -65°C ~ 150°C (TJ) 40 W - - TO-220 - PNP 1.4V @ 1A, 4A 60 V
MJE13005
MJE13005
NTE Electronics
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 - - - - - - - - 4 A 8 @ 2A, 5V - - - 4MHz - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - NPN 1V @ 1A, 4A 400 V
2N6107
2N6107
NTE Electronics
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 - - - - - - - - 7 A 30 @ 2A, 4V - - - 10MHz - - Through Hole -65°C ~ 150°C (TJ) 40 W - - TO-220 - PNP 3.5V @ 3A, 7A 70 V
TIP106
TIP106
NTE Electronics
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 - - - - - - - - 8 A 1000 @ 3A, 4V - - - 4MHz - - Through Hole -65°C ~ 150°C (TJ) 80 W - - TO-220-3 - PNP - Darlington 2.5V @ 80mA, 8A 80 V
TIP127
TIP127
NTE Electronics
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 - - - - - - - - 5 A 1000 @ 3A, 3V - - - - - - Through Hole 150°C (TJ) 2 W - - TO-220 - PNP - Darlington 4V @ 20mA, 5A 100 V
2N6387
2N6387
Harris Semiconductor
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 - - - - - - - - 10 A 1000 @ 5A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220AB - NPN - Darlington 3V @ 100mA, 10A 60 V
MPQ6600A1
MPQ6600A1
On Semiconductor
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TE02486
TE02486
On Semiconductor
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2N6475
2N6475
Harris Semiconductor
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 - - - - - - - - 4 A 15 @ 1.5A, 4V - - - 4MHz - - Through Hole -65°C ~ 150°C (TJ) 40 W - - TO-220-3 - PNP 2.5V @ 2A, 4A 100 V
FGI3040G2
FGI3040G2
On Semiconductor
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TIP31E
TIP31E
NTE Electronics
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 - - - - - - - - 3 A 25 @ 1A, 4V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 40 W - - TO-220 - NPN 2.5V @ 750mA, 3A 140 V
2N5496
2N5496
NTE Electronics
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 - - - - - - - - 7 A 30 @ 2A, 4V - - - 4MHz - - Through Hole -55°C ~ 150°C (TJ) 40 W - - TO-220 - NPN 3.5V @ 3A, 7A 70 V
MJE3055T
MJE3055T
NTE Electronics
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 - - - - - - - - 10 A 20 @ 4A, 4V - - - 2MHz - - Through Hole -55°C ~ 150°C (TJ) 75 W - - TO-220 - NPN 8V @ 3.3A, 10A 60 V
SJ83100
SJ83100
On Semiconductor
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RJK0353DPA-01#J0
RJK0353DPA-01#J0
Renesas
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FJAF4310YTU
FJAF4310YTU
On Semiconductor
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 - - - - - - - - 10 A 90 @ 3A, 4V - - - 30MHz - - Through Hole 150°C (TJ) 80 W - - TO-3PF-3 - NPN 500mV @ 500mA, 5A 140 V
TIP42C
TIP42C
NTE Electronics
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 - - - - - - - - 6 A 30 @ 300mA, 4V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - PNP 1.5V @ 600mA, 6A 100 V
UPA2001C-A
UPA2001C-A
Renesas
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BDX33DS
BDX33DS
Harris Semiconductor
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 - - - - - - - - 10 A 750 @ 3A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - NPN - Darlington 2.5V @ 6mA, 3A 120 V
TIP32E
TIP32E
NTE Electronics
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 - - - - - - - - 3 A 25 @ 1A, 4V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 40 W - - TO-220 - PNP 2.5V @ 750mA, 3A 140 V
TIP41A
TIP41A
NTE Electronics
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 - - - - - - - - 6 A 15 @ 3A, 4V - - - - - - Through Hole 150°C (TJ) 2 W - - TO-220 - NPN 1.5V @ 600mA, 6A 60 V
NTE159M
NTE159M
NTE Electronics
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Through Hole -65°C ~ 200°C (TJ) 1.8 W - - TO-18 - PNP 1.6V @ 50mA, 500mA 60 V
2N6036
2N6036
NTE Electronics
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 - - - - - - - - 4 A 750 @ 2A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 40 W - - TO-126 - PNP - Darlington 3V @ 40mA, 4A 80 V
2N6727
2N6727
NTE Electronics
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 - - - - - - - - 2 A 50 @ 1A, 1V - - - 500MHz - - Through Hole - 1 W - - TO-237 - PNP 500mV @ 100mA, 1A 40 V
Showing 9651-9700 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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