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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2SAR582D3TL1
2SAR582D3TL1
ROHM Semiconductor
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 - - - - - - - - 10 A 200 @ 1A, 3V - - - 230MHz - - Surface Mount 150°C (TJ) 10 W - - TO-252 - PNP 400mV @ 200mA, 4A 30 V
2SAR573D3FRATL
2SAR573D3FRATL
ROHM Semiconductor
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 - - - - - - - - 3 A 180 @ 100mA, 3V - - - - - - Surface Mount 150°C 10 W - - TO-252 - - 400mV @ 50mA, 1A 50 V
2SAR574D3FRATL
2SAR574D3FRATL
ROHM Semiconductor
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 - - - - - - - - 2 A 180 @ 100mA, 3V - - - - - - Surface Mount 150°C (TJ) 10 W - - TO-252 - - 400mV @ 50mA, 1A 80 V
2SD2014
2SD2014
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Sanken
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 - - - - - - - - 4 A 2000 @ 3A, 2V - - - 75MHz - - Through Hole 150°C (TJ) 25 W - - TO-220F - NPN - Darlington 1.5V @ 3mA, 3A 80 V
2SCR573D3FRATL
2SCR573D3FRATL
ROHM Semiconductor
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 - - - - - - - - 3 A 180 @ 100mA, 3V - - - 320MHz - - Surface Mount 150°C (TJ) 10 W - - TO-252 - NPN 350mV @ 50mA, 1A 50 V
2SAR586JGTLL
2SAR586JGTLL
ROHM Semiconductor
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 - - - - - - - - 5 A 120 @ 500mA, 3V - - - 200MHz - - Surface Mount 150°C (TJ) 40 W - - LPTL - PNP 320mV @ 100mA, 2A 80 V
2SAR586D3FRATL
2SAR586D3FRATL
ROHM Semiconductor
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 - - - - - - - - 5 A 120 @ 500mA, 3V - - - - - - Surface Mount 150°C (TJ) 10 W - - TO-252 - - 320mV @ 100mA, 2A 80 V
MJE180 PBFREE
MJE180 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 3 A 50 @ 100mA, 1V - - - 50MHz - - Through Hole -65°C ~ 150°C (TJ) 1.5 W - - TO-126 - NPN 1.7V @ 600mA, 3A 40 V
FJP1943RTU
FJP1943RTU
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On Semiconductor
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 - - - - - - - - 15 A 55 @ 1A, 5V - - - 30MHz - - Through Hole -50°C ~ 150°C (TJ) 80 W - - TO-220-3 - PNP 3V @ 800mA, 8A 230 V
2SAR583D3FRATL
2SAR583D3FRATL
ROHM Semiconductor
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 - - - - - - - - 7 A 180 @ 1mA, 3V - - - 230MHz - - Surface Mount 150°C (TJ) 10 W - - TO-252 - PNP 400mV @ 150mA, 3A 50 V
2SCR583D3FRATL
2SCR583D3FRATL
ROHM Semiconductor
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 - - - - - - - - 7 A 180 @ 1A, 3V - - - 280MHz - - Surface Mount 150°C (TJ) 10 W - - TO-252 - NPN 350mV @ 150mA, 3A 50 V
FMMT411TA
FMMT411TA
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Diodes Incorporated
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 - - - - - - - - 600 mA 100 @ 10mA, 10V - - - 40MHz - - Surface Mount -55°C ~ 150°C (TJ) 730 mW - - SOT-23 (Type DN) - NPN 100mV @ 1mA, 10mA 80 V
2N4013 PBFREE
2N4013 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 1.7µA (ICBO) 60 @ 100mA, 1V - - - 300MHz - - Through Hole - - - - TO-18 - NPN - 30 V
MMST4401Q
MMST4401Q
Yangzhou Yangjie Electronic Technology Co.,Ltd
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2STW100
2STW100
STMicroelectronics
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 - - - - - - - - 25 A 500 @ 10A, 3V - - - - - - Through Hole 150°C (TJ) 130 W - - TO-247-3 - NPN - Darlington 3.5V @ 80mA, 20A 80 V
MJE13005 PBFREE
MJE13005 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 4 A 8 @ 2A, 5V - - - 4MHz - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220-3 - NPN 1V @ 1A, 4A 400 V
ST13003N
ST13003N
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STMicroelectronics
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 - - - - - - - - 1 A 5 @ 1A, 10V - - - - - - Through Hole 150°C (TJ) 20 W - - SOT-32-3 - NPN 1.2V @ 330mA, 1A 400 V
BUL89
BUL89
STMicroelectronics
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 - - - - - - - - 12 A 10 @ 5A, 5V - - - - - - Through Hole 150°C (TJ) 110 W - - TO-220 - NPN 5V @ 2.4A, 12A 400 V
BUB323ZT4G
BUB323ZT4G
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On Semiconductor
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 - - - - - - - - 10 A 500 @ 5A, 4.6V - - - 2MHz - - Surface Mount -65°C ~ 175°C (TJ) 150 W - - D²PAK - NPN - Darlington 1.7V @ 250mA, 10A 350 V
FMMT411FDBWQ-7
FMMT411FDBWQ-7
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Diodes Incorporated
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 - - - - - - - - 5 A 100 @ 10mA, 10V - - - 110MHz - - Surface Mount -55°C ~ 150°C (TJ) 820 mW - - W-DFN2020-3 (Type A) - - 100mV @ 1mA, 10mA 15 V
2N3467 PBFREE
2N3467 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 1 A 40 @ 500mA, 1V - - - 175MHz - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 - PNP 1V @ 100mA, 1A 40 V
2N4237 PBFREE
2N4237 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 3 A 30 @ 250mA, 1V - - - 2MHz - - Through Hole -65°C ~ 200°C (TJ) 6 W - - TO-39 - NPN 600mV @ 100mA, 1A 40 V
2SC6145
2SC6145
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Sanken
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 - - - - - - - - 15 A 40 @ 5A, 4V - - - 60MHz - - Through Hole 150°C (TJ) 160 W - - TO-3P - NPN 500mV @ 500mA, 5A 230 V
2N3421 PBFREE
2N3421 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 500nA (ICBO) 40 @ 1A, 2V - - - 40MHz - - Through Hole -65°C ~ 200°C (TJ) - - - TO-39 - NPN - 80 V
STD01P
STD01P
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Sanken
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 - - - - - - - - 10 A 5000 @ 6A, 4V - - - - - - Through Hole 150°C (TJ) 100 W - - TO-3P-5L - PNP - Darlington 2V @ 6mA, 6A 150 V
2SC6011
2SC6011
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Sanken
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 - - - - - - - - 15 A 50 @ 3A, 4V - - - 20MHz - - Through Hole 150°C (TJ) 160 W - - TO-3P - NPN 500mV @ 500mA, 5A 200 V
2STA2121
2STA2121
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STMicroelectronics
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 - - - - - - - - 17 A 80 @ 1A, 5V - - - 25MHz - - Through Hole 150°C (TJ) 220 W - - TO-264 - PNP 3V @ 800mA, 8A 250 V
STD01N
STD01N
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Sanken
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 - - - - - - - - 10 A 5000 @ 6A, 4V - - - - - - Through Hole 150°C (TJ) 100 W - - TO-3P-5L - NPN - Darlington 2V @ 6mA, 6A 150 V
2SC6145A
2SC6145A
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Sanken
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 - - - - - - - - 15 A 40 @ 5A, 4V - - - 60MHz - - Through Hole 150°C (TJ) 160 W - - TO-3P - NPN 500mV @ 500mA, 5A 260 V
2SA2223A
2SA2223A
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Sanken
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 - - - - - - - - 15 A 40 @ 5A, 4V - - - 35MHz - - Through Hole 150°C (TJ) 160 W - - TO-3P - PNP 500mV @ 500mA, 5A 260 V
2N5301 PBFREE
2N5301 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 30 A - - - - 4MHz - - Through Hole - 200 W - - TO-3 - NPN - 40 V
2N6384 PBFREE
2N6384 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 10 A 1000 @ 5A, 3V - - - - - - Through Hole -65°C ~ 200°C (TJ) 100 W - - TO-3 - NPN - Darlington 3V @ 100mA, 10A 60 V
2N3791 PBFREE
2N3791 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 10 A 50 @ 1A, 2V - - - 4MHz - - Through Hole -65°C ~ 200°C (TJ) 150 W - - TO-3 - PNP 1V @ 500mA, 5A 60 V
2N3442 PBFREE
2N3442 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 10 A 20 @ 3A, 4V - - - 80kHz - - Through Hole -65°C ~ 200°C (TJ) 117 W - - TO-3 - NPN 5V @ 2A, 10A 140 V
2N6545 PBFREE
2N6545 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 8 A 7 @ 5A, 3V - - - 28MHz - - Through Hole -65°C ~ 200°C (TJ) 125 W - - TO-3 - NPN 5V @ 2A, 8A 400 V
2N5884 PBFREE
2N5884 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 25 A 20 @ 10A, 4V - - - 4MHz - - Through Hole -65°C ~ 200°C (TJ) 200 W - - TO-3 - PNP 4V @ 6.25A, 25A 80 V
2N4398 PBFREE
2N4398 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 30 A 15 @ 15A, 2V - - - 4MHz - - Through Hole -65°C ~ 200°C (TJ) 5 W - - TO-3 - PNP 4V @ 6A, 30A 40 V
2N3773 PBFREE
2N3773 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 16 A 15 @ 8A, 4V - - - 4MHz - - Through Hole -65°C ~ 200°C (TJ) 150 W - - TO-3 - NPN 4V @ 3.2A, 16A 140 V
2N4895 PBFREE
2N4895 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 1µA 40 @ 2A, 2V - - - 50MHz - - Through Hole - - - - TO-39 - NPN - 60 V
JANTX2N3498
JANTX2N3498
Microchip Technology
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 - - - - - - - - 500 mA 40 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN 600mV @ 30mA, 300mA 100 V
JANTX2N5153
JANTX2N5153
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MACOM Technology Solutions
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 - - - - - - - - 2 A 70 @ 2.5A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 - PNP 1.5V @ 500mA, 5A 80 V
JANTXV2N3868
JANTXV2N3868
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MACOM Technology Solutions
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 - - - - - - - - - - - - - - - - Through Hole - - - - TO-39 (TO-205AD) - - - -
JANTXV2N3767
JANTXV2N3767
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MACOM Technology Solutions
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 - - - - - - - - 4 A 40 @ 500mA, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 25 W - - TO-66 - NPN 2.5V @ 100mA, 1A 80 V
JANTX2N5682
JANTX2N5682
Microchip Technology
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 - - - - - - - - 1 A 40 @ 250mA, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 - NPN 1V @ 50mA, 500mA 120 V
JANTX2N6058
JANTX2N6058
Microchip Technology
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 - - - - - - - - 12 A 1000 @ 6A, 3V - - - - - - Through Hole -55°C ~ 175°C (TJ) 150 W - - TO-3 - NPN - Darlington 3V @ 120mA, 12A 80 V
2N5685
2N5685
Microchip Technology
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 - - - - - - - - 50 A 30 @ 5mA, 2V - - - - - - Through Hole -55°C ~ 200°C (TJ) 300 W - - TO-204AD (TO-3) - NPN 5V @ 10A, 50A 60 V
JANTXV2N6287
JANTXV2N6287
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MACOM Technology Solutions
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 - - - - - - - - 20 A 1000 @ 6A, 3V - - - - - - Through Hole -65°C ~ 175°C (TJ) 175 W - - TO-3 (TO-204AA) - PNP - Darlington 2V @ 40mA, 10A 100 V
PMMT491A
PMMT491A
Yangzhou Yangjie Electronic Technology Co.,Ltd
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 - - - - - - - - - - - - - - - - - - - - - - - - - -
JANS2N3019
JANS2N3019
Microchip Technology
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 - - - - - - - - 1 A 50 @ 500mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 800 mW - - TO-5 - NPN 500mV @ 50mA, 500mA 80 V
JANTX2N2945A
JANTX2N2945A
Microchip Technology
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 - - - - - - - - 100 mA 70 @ 1mA, 500mV - - - - - - Through Hole -65°C ~ 200°C (TJ) 400 mW - - TO-46-3 - PNP - 20 V
Showing 8051-8100 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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